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CMM1110-BD Datasheet(PDF) 6 Page - Mimix Broadband |
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CMM1110-BD Datasheet(HTML) 6 Page - Mimix Broadband |
6 / 7 page Page 6 of 7 App Note [1] Biasing - As shown in the bonding diagram, this device operates using a self-biased architecture and only requires one drain bias. Bias is nominally Vd1,2=8V, I TOTAL=70mA. Additionally there are six total source resistors on chip. The three resistors on the input stage are 15, 20 and 32 Ohms. The three resistors on the output stage are 15, 20 and 32 Ohms. One of these must be bonded to ground for each amplifier stage to achieve performance as shown. Bonding to one of the other resistors or any or all in parallel may allow additional performance adjustment. App Note [2] Bias Arrangement - Each DC pad (Vd) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended. Device Schematic 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. CMM1110 May 2006 - Rev 01-May-06 MTTFTable (TBD) (ThermalResistance(Rth)is60.0ºC/W) Backplate Temperature 55 deg Celsius 75 deg Celsius 95 deg Celsius Channel Temperature deg Celsius deg Celsius deg Celsius FITs E+ E+ E+ MTTF Hours E+ E+ E+ Rth C/W C/W C/W Bias Conditions: Vd1,2=8.0V, I TOTAL=70 mA These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry. |
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