1

MRF18090B MRF18090BS

MOTOROLA RF DEVICE DATA

The RF MOSFET Line

RF Power Field Effect Transistors

N–Channel Enhancement–Mode Lateral MOSFETs

Designed for GSM and EDGE base station applications with frequencies from

1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

applications. To be used in class AB for GSM and EDGE cellular radio

applications.

• GSM and EDGE Performances, Full Frequency Band

Power Gain — 13.5 dB (Typ) @ 90 Watts (CW)

Efficiency — 45% (Typ) @ 90 Watts (CW)

• Internally Matched, Controlled Q, for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts (CW) Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large–Signal Impedance Parameters

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain–Source Voltage

65

Vdc

Gate–Source Voltage

+15, –0.5

Vdc

Derate above 25

°C

250

1.43

Watts

W/

°C

Storage Temperature Range

–65 to +200

°C

Operating Junction Temperature

200

°C

ESD PROTECTION CHARACTERISTICS

Test Conditions

Class

Human Body Model

2 (Minimum)

Machine Model

M3 (Minimum)

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

0.7

°C/W

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

Order this document

by MRF18090B/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MRF18090B

MRF18090BS

1.90 – 1.99 GHz, 90 W, 26 V

LATERAL N–CHANNEL

RF POWER MOSFETS

CASE 465B–03, STYLE 1

(NI–880)

(MRF18090B)

CASE 465C–02, STYLE 1

(NI–880S)

(MRF18090BS)

REV 3