XN04604

2

SJJ00084BED

• Tr2

■ Electrical Characteristics T

• Tr1

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

−15

V

Collector-emitter voltage (Base open)

−10

V

Emitter-base voltage (Collector open)

= −10 µA, I

C

= 0

−7V

Collector-base cutoff current (Emitter open)

− 0.1

µA

100

350



= −2 V, I

C

= −1 A

60

Collector-emitter saturation voltage

− 0.16 − 0.30

V

Base-emitter saturation voltage

− 0.8

−1.2

V

Transition frequency

= −10 V, I

E

= 50 mA, f = 200 MHz

130

MHz

Collector output capacitance

= −10 V, I

E

= 0, f = 1 MHz

22

pF

(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Pulse measurement

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *1: Pulse measurement

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

V

Collector-emitter voltage (Base open)

= 1 mA, I

B

= 020

V

Emitter-base voltage (Collector open)

V

Collector-base cutoff current (Emitter open)

0.1

µA

1

= 2 V, I

C

= 0.5 A

200

800



60

1

0.13

0.40

V

1

= 0.5 A, I

B

= 20 mA

1.2

V

Transition frequency

200

MHz

Collector output capacitance

10

pF

(Common base, input open circuited)

2

1.0

Ω

1 k

Ω

(

Ω)

f

= 1 kHz

V

= 0.3 V

V

A