 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
CPV362M4F Datasheet(PDF) 2 Page - International Rectifier |
|
||||||||||||||||||||||||||||||
CPV362M4F Datasheet(HTML) 2 Page - International Rectifier |
|
|
2 / 10 page  CPV362M4F Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) ––– 30 45 IC = 4.8A Qge Gate - Emitter Charge (turn-on) ––– 4.0 6.0 nC VCC = 400V Qgc Gate - Collector Charge (turn-on) ––– 13 20 See Fig. 8 td(on) Turn-On Delay Time ––– 49 ––– TJ = 25°C tr Rise Time ––– 22 ––– ns IC = 4.8A, VCC = 480V td(off) Turn-Off Delay Time ––– 200 300 VGE = 15V, RG = 50Ω tf Fall Time ––– 214 320 Energy losses include "tail" and Eon Turn-On Switching Loss ––– 0.23 ––– diode reverse recovery Eoff Turn-Off Switching Loss ––– 0.33 ––– mJ See Fig. 9, 10, 18 Ets Total Switching Loss ––– 0.45 0.70 td(on) Turn-On Delay Time ––– 48 ––– TJ = 150°C, See Fig. 10,11, 18 tr Rise Time ––– 25 ––– ns IC = 4.8A, VCC = 480V td(off) Turn-Off Delay Time ––– 435 ––– VGE = 15V, RG = 50 Ω tf Fall Time ––– 364 ––– Energy losses include "tail" and Ets Total Switching Loss ––– 0.93 ––– mJ diode reverse recovery Cies Input Capacitance ––– 340 ––– VGE = 0V Coes Output Capacitance ––– 63 ––– pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance ––– 5.9 ––– ƒ = 1.0MHz trr Diode Reverse Recovery Time ––– 37 55 ns TJ = 25°C See Fig. ––– 55 90 TJ = 125°C 14 IF = 8.0A Irr Diode Peak Reverse Recovery Current ––– 3.5 50 A TJ = 25°C See Fig. ––– 4.5 8.0 TJ = 125°C 15 VR = 200V Qrr Diode Reverse Recovery Charge ––– 65 138 nC TJ = 25°C See Fig. ––– 124 360 TJ = 125°C 16 di/dt = 200A/µs di(rec)M/dt Diode Peak Rate of Fall of Recovery ––– 240 ––– A/µs TJ = 25°C See Fig. During tb ––– 210 ––– TJ = 125°C 17 Pulse width ≤ 80µs; duty factor ≤ 0.1%. VCC=80%(VCES), VGE=20V, L=10µH, RG= 50Ω, ( See fig. 19 ) Pulse width 5.0µs, single shot. Repetitive rating; VGE=20V, pulse width limited by max. junction temperature. ( See fig. 20 ) Notes: Switching Characteristics @ TJ = 25°C (unless otherwise specified) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ––– ––– V VGE = 0V, IC = 250µA ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.72 ––– V/°C VGE = 0V, IC = 1.0mA VCE(on) Collector-to-Emitter Saturation Voltage ––– 1.41 1.7 IC = 4.8A VGE = 15V ––– 1.66 ––– V IC = 8.8A See Fig. 2, 5 ––– 1.42 ––– IC = 4.8A, TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 ––– 6.0 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -11 ––– mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance 2.9 5.0 ––– S VCE = 100V, IC = 4.8A ICES Zero Gate Voltage Collector Current ––– ––– 250 µA VGE = 0V, VCE = 600V ––– ––– 1700 VGE = 0V, VCE = 600V, TJ = 150°C VFM Diode Forward Voltage Drop ––– 1.4 1.7 V IC = 8.0A See Fig. 13 ––– 1.3 1.6 IC = 8.0A, TJ = 150°C IGES Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V |
Similar Part No. - CPV362M4F |
|
Similar Description - CPV362M4F |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.COM |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
