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UN911H Datasheet(PDF) 2 Page - Panasonic Semiconductor |
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UN911H Datasheet(HTML) 2 Page - Panasonic Semiconductor |
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2 / 14 page  2 Transistors with built-in Resistor s Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = –50V, IE = 0 – 0.1 µA ICEO VCE = –50V, IB = 0 – 0.5 µA UN9111 – 0.5 UN9112/9114/911E/911D – 0.2 UN9113/UNR911AJ – 0.1 UN9115/9116/9117/9110/UNR911BJ IEBO VEB = –6V, IC = 0 – 0.01 mA UN911F/911H –1.0 UN9119 –1.5 UN9118/911L/911CJ –2.0 Collector to base voltage VCBO IC = –10µA, IE = 0 –50 V Collector to emitter voltage VCEO IC = –2mA, IB = 0 –50 V UN9111 35 UN9112/911E 60 UN9113/9114/UNR911AJ/911CJ hFE VCE = –10V, IC = –5mA 80 UN9115*/9116*/9117*/9110*UNR911BJ 160 460 UN911F/911D/9119/911H 30 UN9118/911L 20 Collector to emitter saturation voltage VCE(sat) IC = –10mA, IB = – 0.3mA – 0.25 V Output voltage high level VOH VCC = –5V, VB = – 0.5V, RL = 1kΩ –4.9 V Output voltage low level VCC = –5V, VB = –2.5V, RL = 1kΩ – 0.2 UN9113/UNR911BJ VCC = –5V, VB = –3.5V, RL = 1kΩ – 0.2 UN911D VOL VCC = –5V, VB = –10V, RL = 1kΩ – 0.2 V UN911E VCC = –5V, VB = –6V, RL = 1kΩ – 0.2 UNR911AJ VCC = –5V, VB = –5.0V, RL = 1kΩ – 0.2 Transition frequency 150 UNR911AJ fT VCB = –10V, IE = 2mA, f = 200MHz 80 MHz UN9111/9114/9115 10 UN9112/9117 22 UN9113/9110/911D/911E 47 UN9116/911F/911L R1 (–30%) 4.7 (+30%) k Ω UN9118 0.51 UN9119 1 UN911H 2.2 UNR911AJ/911BJ 100 Emitter cutoff current Forward current transfer ratio Input resis- tance UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/ 911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ * hFE rank classification (UN9115/9116/9117/9110) Rank Q R S hFE 160 to 260 210 to 340 290 to 460 |
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Similar Description - UN911H |
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