1
Product Description
EDS-102431 Rev A
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of
this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are
implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc..
All worldwide rights reserved.
Sirenza Microdevices SNA-286 is a GaAs monolithic broad-
band amplifier (MMIC) housed in a low-cost surface-mount-
able plastic package. At 1950 MHz, this amplifier provides
15.5dB of gain and +14dBm of P1dB power when biased at
50mA.
The use of an external resistor allows for bias flexibility and
stability. These unconditionally stable amplifiers are designed
for use as general purpose 50 ohm gain blocks.
Also available in chip form (SNA-200), its small size (0.33mm
x 0.33mm) and gold metallization make it an ideal choice for
use in hybrid circuits.
SNA-286
DC-6.0 GHz, Cascadable
GaAs MMIC Amplifier
Product Features
Patented, Reliable GaAsHBT Technology
Cascadable 50 Ohm Gain Block
15dB Gain, +14dBm P1dB
1.5:1 Input and Output VSWR
Operates From Single Supply
Low Cost Surface Mount Plastic Package
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Output Power vs. Frequency
12
13
14
15
16
0.1
0.5
1
1.5
2
3
4
6
dBm
GHz
l
o
b
m
y
S
r
e
t
e
m
a
r
a
P
s
t
i
n
U
y
c
n
e
u
q
e
r
F
.
n
i
M
.
p
y
T
.
x
a
M
G
P
n
i
a
G
r
e
w
o
P
l
a
n
g
i
S
ll
a
m
S
B
d
B
d
B
d
z
H
M
0
5
8
z
H
M
0
5
9
1
z
H
M
0
0
4
2
4
.
4
1
0
.
6
1
5
.
5
1
0
.
5
1
6
.
7
1
G
F
s
s
e
n
t
a
l
F
n
i
a
GB
d
z
H
G
6
-
1
.
0
-
/
+
3
.
1
B
d
3
W
Bh
t
d
i
w
d
n
a
B
B
d
3z
H
G
5
.
4
P
B
d
1
n
o
i
s
s
e
r
p
m
o
C
B
d
1
t
a
r
e
w
o
P
t
u
p
t
u
Om
B
d
0
5
9
1M z
H
1
0
.
4
O P
I
3
t
u
p
t
u
O
t
n
i
o
P
t
p
e
c
r
e
t
n
I
r
e
d
r
O
d
ri
h
T
m
B
d
0
5
9
1M z
H
0
.
9
2
F
Ne
r
u
g
i
F
e
s
i
o
NB
d
0
5
9
1M z
H
7
.
5
R
W
S
Vt
u
p
t
u
O
/
t
u
p
n
I
-
z
H
G
6
-
1
.
0
1
:
5
.
1
L
O
S
In
o
it
a
l
o
s
I
e
s
r
e
v
e
RB
d
z
H
G
6
-
1
.
0
0
2
V
D
e
g
a
tl
o
V
g
n
it
a
r
e
p
O
e
c
i
v
e
D
V
.
3
3
8
.
3
.
4
3
I
D
t
n
e
r
r
u
C
g
n
it
a
r
e
p
O
e
c
i
v
e
DA
m5
40
55
5
T
d
/
G
d
e
c
i
v
e
D
n
i
a
G
t
n
e
i
c
if
f
e
o
C
e
r
u
t
a
r
e
p
m
e
T
B
d
C
°
/
1
0
0
.
0
-
8
R
H
T
l-
j
,
)
d
a
e
l
o
t
n
o
it
c
n
u
j
(
e
c
n
a
t
s
i
s
e
R
l
a
m
r
e
h
T
W
/
C
°
0
4
3
Test Conditions:
V
S = 8 V
I
D = 50 mA Typ.
OIP
3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm
R
BIAS = 82 Ohms
T
L = 25ºC
Z
S = ZL = 50 Ohms