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UN211H Datasheet(PDF) 1 Page - Panasonic Semiconductor

Part # UN211H
Description  Silicon PNP epitaxial planer transistor
Download  17 Pages
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Manufacturer  PANASONIC [Panasonic Semiconductor]
Direct Link  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

UN211H Datasheet(HTML) 1 Page - Panasonic Semiconductor

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1
Transistors with built-in Resistor
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Silicon PNP epitaxial planer transistor
For digital circuits
s Features
q
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
q
Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.
s Resistance by Part Number
Marking Symbol
(R1)(R2)
q
UN2111
6A
10k
10k
q
UN2112
6B
22k
22k
q
UN2113
6C
47k
47k
q
UN2114
6D
10k
47k
q
UN2115
6E
10k
q
UN2116
6F
4.7k
q
UN2117
6H
22k
q
UN2118
6I
0.51k
5.1k
q
UN2119
6K
1k
10k
q
UN2110
6L
47k
q
UN211D
6M
47k
10k
q
UN211E
6N
47k
22k
q
UN211F
6O
4.7k
10k
q
UN211H
6P
2.2k
10k
q
UN211L
6Q
4.7k
4.7k
q
UN211M
EI
2.2k
47k
q
UN211N
EW
4.7k
47k
q
UN211T
EY
22k
47k
q
UN211V
FC
2.2k
2.2k
q
UN211Z
FE
4.7k
22k
s Absolute Maximum Ratings (Ta=25˚C)
1:Base
2:Emitter
EIAJ:SC-59
3:Collector
Mini Type Package
Unit: mm
Internal Connection
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–50
V
Collector to emitter voltage
VCEO
–50
V
Collector current
IC
–100
mA
Total power dissipation
PT
200
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 to +150
˚C
2.8
+0.2
–0.3
1.5
+0.25
–0.05
0.65
±0.15
0.65
±0.15
3
1
2
0.4
±0.2
0.1 to 0.3
B
C
R1
R2
E


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