© Semiconductor Components Industries, LLC, 2005

August, 2005 − Rev. 3

1

Publication Order Number:

MBRS3200T3/D

MBRS3200T3

Surface Mount

Schottky Power Rectifier

This device employs the Schottky Barrier principle in a large area

metal−to−silicon power diode. State−of−the−art geometry features

epitaxial construction with oxide passivation and metal overlay

contact. Ideally suited for low voltage, high frequency rectification, or

as free wheeling and polarity protection diodes in surface mount

applications where compact size and weight are critical to the system.

Features

Mechanical Charactersistics

Leads are Readily Solderable

260

°C Max. for 10 Seconds

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

200

V

Average Rectified Forward Current

3.0

A

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions

Halfwave, Single Phase, 60 Hz)

100

A

Operating Junction Temperature

−65 to +150

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

Device

Package

ORDERING INFORMATION

SMB

CASE 403A

PLASTIC

MBRS3200T3

SMB

2500/Tape & Reel

SCHOTTKY BARRIER

RECTIFIER

3.0 AMPERE

200 VOLTS

http://onsemi.com

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

MBRS3200T3G

SMB

(Pb−Free)

2500/Tape & Reel

B320

= Specific Device Code

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

(Note: Microdot may be in either location)

AYWW

B320

G

G

MARKING DIAGRAM