K6R4008C1C-E12 datasheet(4/9 Pages) SAMSUNG

Part #	K6R4008C1C-E12

Description	512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges.

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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K6R4008C1C-C, K6R4008C1C-E, K6R4008C1C-I CMOS SRAM

PRELIMINARY

Rev 4.0

- 4 -

September 2001

RECOMMENDED DC OPERATING CONDITIONS*(TA=0 to 70

°C)

*

The above parameters are also guaranteed at extended and industrial temperature range.

** VIL(Min) = -2.0V a.c(Pulse Width

≤ 8ns) for I ≤ 20mA.

*** VIH(Max) = VCC + 2.0V a.c (Pulse Width

≤ 8ns) for I ≤ 20mA.

Parameter

Symbol

Min

Typ

Max

Unit

Supply Voltage

VCC

4.5

5.0

5.5

V

Ground

VSS

0

V

Input High Voltage

VIH

2.2

-

VCC+0.5***

V

Input Low Voltage

VIL

-0.5**

-

0.8

V

DC AND OPERATING CHARACTERISTICS*(TA=0 to 70

°C, Vcc=5.0V±10%, unless otherwise specified)

* The above parameters are also guaranteed at extended and industrial temperature range.

** VCC=5.0V

±5%, Temp.=25°C.

Parameter

Symbol

Test Conditions

Min

Max

Unit

Input Leakage Current

ILI

VIN=VSS to VCC

-2

2

µA

Output Leakage Current

ILO

CS=VIH or OE=VIH or WE=VIL

VOUT=VSS to VCC

-2

2

µA

Operating Current

ICC

Min. Cycle, 100% Duty

CS=VIL, VIN=VIH or VIL, IOUT=0mA

Com.

10ns

-

170

mA

12ns

-

160

15ns

-

150

Ext.

Ind.

10ns

-

185

12ns

-

175

15ns

-

165

Standby Current

ISB

Min. Cycle, CS=VIH

-

60

mA

ISB1

f=0MHz, CS

≥VCC-0.2V,

VIN

≥VCC-0.2V or VIN≤0.2V

-

10

mA

Output Low Voltage Level

VOL

IOL=8mA

-

0.4

V

Output High Voltage Level

VOH

IOH=-4mA

2.4

-

V

VOH1**

IOH1=-0.1mA

-

3.95

V

CAPACITANCE*(TA=25

°C, f=1.0MHz)

* Capacitance is sampled and not 100% tested.

Item

Symbol

Test Conditions

MIN

Max

Unit

Input/Output Capacitance

CI/O

VI/O=0V

-

8

pF

Input Capacitance

CIN

VIN=0V

-

7

pF

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