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UN2213 Datasheet(PDF) 2 Page - Panasonic Semiconductor |
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UN2213 Datasheet(HTML) 2 Page - Panasonic Semiconductor |
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2 / 17 page  2 Transistors with built-in Resistor s Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 50V, IE = 0 0.1 µA ICEO VCE = 50V, IB = 0 0.5 µA UN2211 0.5 UN2212/2214/221E/221D/221M/221N/221T 0.2 UN2213 0.1 UN2215/2216/2217/2210 IEBO VEB = 6V, IC = 0 0.01 mA UN221F/221K 1.0 UN2219 1.5 UN2218/221L/221V 2.0 UN221Z 0.4 Collector to base voltage VCBO IC = 10µA, IE = 0 50 V Collector to emitter voltage VCEO IC = 2mA, IB = 0 50 V UN2211 35 UN2212/221E 60 UN2213/2214/221M 80 UN2215*/2216*/2217*/2210* hFE VCE = 10V, IC = 5mA 160 460 UN221F/221D/2219 30 UN2218/221K/221L 20 UN221N/221T 80 400 — UN221V 60 200 Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 0.3mA 0.25 V UN221V IC = 10mA, IB = 1.5mA 0.04 0.25 Output voltage high level VOH VCC = 5V, VB = 0.5V, RL = 1kΩ 4.9 V Output voltage low level VCC = 5V, VB = 2.5V, RL = 1kΩ 0.2 UN2213/221K VOL VCC = 5V, VB = 3.5V, RL = 1kΩ 0.2 V UN221D VCC = 5V, VB = 10V, RL = 1kΩ 0.2 UN221E VCC = 5V, VB = 6V, RL = 1kΩ 0.2 Transition frequency fT VCB = 10V, IE = –2mA, f = 200MHz 150 MHz UN2211/2214/2215/221K 10 UN2212/2217/221T 22 UN2213/221D/221E/2210 47 UN2216/221F/221L/221N/221Z R1 (–30%) 4.7 (+30%) k Ω UN2218 0.51 UN2219 1 UN221M/221V 2.2 Emitter cutoff current Forward current transfer ratio Input resis- tance * hFE rank classification (UN2215/2216/2217/2210) Rank Q R S hFE 160 to 260 210 to 340 290 to 460 UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/ 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z |
Similar Part No. - UN2213 |
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Similar Description - UN2213 |
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