PNP TRANSISTOR

D882

3.0A

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（Ta=25℃）

PARAMETERS

SYMBOL MIN TYP MAX

UNIT

CONDITION

Collector-Emitter Breakdown Voltage

BVceo

30

V

Ic=1mA

Collector-Base Breakdown Voltage

BVcbo

4 0

V

Ic=5uA

Emitter-Base Breakdown Voltage

BVebo

5

V

Ie=50μA

Collector-Base Leakage

Icbo

0.1

uA

Vcb=10V

Emitter-Base Leakage

Iebo

0.1

uA

Veb=5V

Collector-Emitter Saturation Voltage Vce（sat）

0.5

V

Ic=2A, Ib=0.1A

DC Current Gain

Hfe1

80

390

Vce=2V,Ic=0.5A

Collector Current

Ic

3

A

Peak Collector Current

Icp

5

A(Pulse)

Current Gain Bandwidth

50

MHz

Vcb=5V, Ic=0.1A

Output Capacitance

Cob

50

pF

Vcb=10V,Ie=0,f=1MHz

Power Dissipation

Pc

1.25

W

Junction Temperature

Tj

150

℃

Storage Temperature

Tstg

-55

150

℃

Classification of Hfe

Rank

R

O

Y

Range

80-160

100-200

170-390

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

TEL: (650) 9389294 FAX: (650) 9389295

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