1

Transistors with built-in Resistor

UN2154

Silicon PNP epitaxial planer transistor

For digital circuits

q

q

Costs can be reduced through downsizing of the equipment and

reduction of the number of parts.

q

Mini type package, allowing downsizing of the equipment and

automatic insertion through tape packing and magazine packing.

1:Base

2:Emitter

EIAJ:SC-59

3:Collector

Mini Type Package

Unit: mm

Marking Symbol:

EV

Internal Connection

Parameter

Symbol

Ratings

Unit

Collector to base voltage

–30

V

Collector to emitter voltage

–30

V

Collector current

–100

mA

Total power dissipation

200

mW

Junction temperature

150

˚C

Storage temperature

–55 to +150

˚C

2.8

+0.2

–0.3

1.5

+0.25

–0.05

0.65

±0.15

0.65

±0.15

3

1

2

0.4

±0.2

0.1 to 0.3

B

C

E

R1(10k

Ω)

R2

(47k

Ω)

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector to base voltage

–30

V

Collector to emitter voltage

–30

V

Collector cutoff current

– 0.1

µA

– 0.5

µA

Emitter cutoff current

– 0.1

mA

Forward current transfer ratio

80

—

Collector to emitter saturation voltage

– 0.5

–1.2

V

Output voltage high level

–4.9

V

Output voltage low level

– 0.2

V

Input resistance

–30%

10

+30%

k

Ω

Resistance ratio

0.213

—

Transition frequency

80

MHz