FEATURES

• Small Form Factor Package(GW): 9 pins coplanar

• Integrated Design Optimizes Performance at

Bit Rates up to 10.7Gb/s

• High Gain: 4k

Ω(Single-ended), 8kΩ(Differential)

• High Sensitivity: -27dBm (typ.)

• Electrical Differential Output

• Wide Bandwidth: 8.5GHz (typ.)

• Operates in both C and L wavelength bands

• Wide Operating Temperature Range: -5°C to +75°C

APPLICATIONS

This APD with HBT preamplifier is intended to function as an optical receiver

at 1,310nm or 1,530-1,610nm in SONET, SDH, DWDM or other optical fiber

systems operating up to 10.7Gb/s. The typical transimpedance (Zt) value

of 4,000

Ω optimizes the total bandwidth for 10Gb/s application. The detector

preamplifier is DC coupled and has an electrical differential output.

DESCRIPTION

The FRM5N142GW incorporates a high bandwidth InGaAs APD photo diode, a GaAs

HBT IC amplifier in a hermetically sealed Small Form Factor package (SFF). The APD is

processed with modern MOVPE techniques resulting in a reliable performance over a wide

range of operating conditions. The lens coupling system and the single mode fiber are

assembled using Nd YAG welding.

1

Edition 1.1

October 2003

InGaAs-APD/Preamp

Receiver

FRM5N142GW

Parameter

Symbol

Storage Temperature

Tstg

-40 to +85

°C

Operating Temperature

-5 to +75

°C

Top

Supply Voltage

-6 to 0

V

Vss

PIN Reverse Voltage

0 to VB(Note)

V

VR

PIN Reverse Current

5mA

Ratings

Unit

ABSOLUTE MAXIMUM RATINGS (Tc=25°C)

Note: Since VB may vary from device-to-device, VB data is attached to each device for reference.