FMM5805X

17.5-20GHz Power Amplifier MMIC

Item

Symbol

Drain Voltage

VDD

10

V

Gate Voltage

VGG

-3.0

V

Input Power

Pin

22

dBm

°C

Storage Temperature

-65 to +175

Tstg

Condition

Unit

Rating

ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)

Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs:

1. The drain-source operating voltage (VDD) should not exceed 6 volts.

2. The forward and reverse gate currents should not exceed 4.0 and -0.33 mA respectively.

3. This product should be hermetically packaged

Operating Backside Temperature

-40 to +85

°C

Top

1

Edition 1.0

May 2000

Item

Symbol

Output Return Loss

RLo

Conditions

Unit

Limits

Typ.

Max.

Min.

ELECTRICAL CHARACTERISTICS (Ambient Temperature Tc=25°C)

Power Gain at 1 dB G.C.P.

16

21

26

-

-8

-

dB

Input Return Loss

RLi

--

-12

dB

dB

Frequency Range

f

17.5 - 20.0

GHz

Output Power at 1 dB G.C.P.

29

31

-

dBm

Drain Current

-

700

950

mA

G.C.P.: Gain Compression Point

Power-Added Efficiency

-30

-

%

ηadd

VDD = 6V

IDD = 650mA (Typ.)

ZS = ZL = 50Ω

Note: RF parameter sample size 10pcs./wafer. Criteria (accept/reject)=(0/1)

DESCRIPTION

The FMM5805X is a high-gain, high power, 3-stage MMIC

amplifier designed for operation in the17.5-20.0 GHz

frequency range. This amplifier has an input and output

designed for use in 50Ω systems.This device is well suited

for point-to-point communication applications.

FEATURES

• High Output Power: P1dB = 31.0dBm (Typ.)

• High Gain: G1dB = 21.0dB (Typ.)

• High PAE: ηadd = 30% (Typ.)

• Impedance Matched Zin/Zout = 50Ω

• 0.25µm PHEMT Technology