MX29LV800CTTI-70G datasheet(1/69 Pages) MCNIX

Part #	MX29LV800CTTI-70G

Description	8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

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Manufacturer	MCNIX [Macronix International]

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P/N:PM1183

MX29LV800C T/B

8M-BIT[1Mx8/512Kx16]CMOSSINGLEVOLTAGE

3VONLYFLASHMEMORY

• Ready/Busy# pin (RY/BY#)

- Provides a hardware method of detecting program or

erase operation completion

• Sector protection

- Hardware method to disable any combination of

sectors from program or erase operations

- Temporary sector unprotected allows code changes

in previously locked sectors.

• CFI (Common Flash Interface) compliant

- Flash device parameters stored on the device and

provide the host system to access

• 100,000 minimum erase/program cycles

• Latch-up protected to 100mA from -1V to VCC+1V

• Boot Sector Architecture

- T = Top Boot Sector

- B = Bottom Boot Sector

• Package type:

- 44-pin SOP

- 48-pin TSOP

- 48-ball CSP (6 x 8mm)

- 48-ball CSP (4 x 6mm)

- All Pb-free devices are RoHS Compliant

• Compatibility with JEDEC standard

- Pinout and software compatible with single-power

supply Flash

• 10 years data retention

FEATURES

• Extended single - supply voltage range 2.7V to 3.6V

• 1,048,576 x 8/524,288 x 16 switchable

• Single power supply operation

- 3.0V only operation for read, erase and program

operation

• Fast access time: 45R/55R/70/90ns

• Low power consumption

- 30mA maximum active current

- 0.2uA typical standby current

• Command register architecture

- Byte/word Programming (9us/11us typical)

- Sector Erase (Sector structure 16K-Bytex1,

8K-Bytex2, 32K-Bytex1, and 64K-Byte x15)

• Fully compatible with MX29LV800BT/BB device

• Auto Erase (chip & sector) and Auto Program

- Automatically erase any combination of sectors with

Erase Suspend capability

- Automatically program and verify data at specified

address

• Erase suspend/Erase Resume

- Suspends sector erase operation to read data from,

or program data to, any sector that is not being erased,

then resumes the erase

• Status Reply

- Data# polling & Toggle bit for detection of program

and erase operation completion

GENERAL DESCRIPTION

The MX29LV800C T/B is a 8-mega bit Flash memory

organized as 1M bytes of 8 bits or 512K words of 16

bits. MXIC's Flash memories offer the most cost-effec-

tive and reliable read/write non-volatile random access

memory. The MX29LV800C T/B is packaged in 44-pin

SOP, 48-pin TSOP, and 48-ball CSP. It is designed to be

reprogrammed and erased in system or in standard

EPROM programmers.

The standard MX29LV800C T/B offers access time as

fast as 45ns, allowing operation of high-speed micropro-

cessors without wait states. To eliminate bus conten-

tion, the MX29LV800C T/B has separate chip enable

(CE#) and output enable (OE#) controls.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29LV800C T/B uses a command register to manage

this functionality. The command register allows for 100%

TTL level control inputs and fixed power supply levels

during erase and programming, while maintaining maxi-

mum EPROM compatibility.

MXIC Flash technology reliably stores memory contents

even after 100,000 erase and program cycles. The MXIC

cell is designed to optimize the erase and programming

mechanisms. In addition, the combination of advanced

tunnel oxide processing and low internal electric fields

for erase and program operations produces reliable cy-

cling. The MX29LV800C T/B uses a 2.7V~3.6V VCC

supply to perform the High Reliability Erase and auto

Program/Erase algorithms.

The highest degree of latch-up protection is achieved

with MXIC's proprietary non-epi process. Latch-up pro-

tection is proved for stresses up to 100 milliamperes on

address and data pin from -1V to VCC + 1V.

REV. 1.4, APR. 24, 2006

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MX29LV800CTTI-70G Datasheet(PDF) 1 Page - Macronix International

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