HY62V8100BLLG datasheet(4/12 Pages) HYNIX

Part #	HY62V8100BLLG

Description	128K x8 bit 3.3V Low Power CMOS slow SRAM

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Manufacturer	HYNIX [Hynix Semiconductor]

Direct Link	http://www.skhynix.com/kor/main.do

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HY62V8100B Series

Rev 13 / Apr. 2001

3

RECOMMENDED DC OPERATING CONDITION

Symbol

Parameter

Min.

Typ.

Max.

Unit

Vcc

Supply Voltage

3.0

3.3

3.6

V

Vss

Ground

0

V

VIH

Input High Voltage

2.2

-

Vcc+0.3

V

VIL

Input Low Voltage

-0.3(1)

-

0.6

V

Note :

1. VIL = -1.5V for pulse width less than 30ns and not 100% tested

DC ELECTRICAL CHARACTERISTICS

Vcc = 3.0V~3.6V, TA = 0

°C to 70°C / -25°C to 85°C (E) / -40¡ Éto 85¡ É(I), unless otherwise specified

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

ILI

Input Leakage Current

Vss < VIN < Vcc

-1

-

1

uA

ILO

Output Leakage Current

Vss <VOUT < Vcc,

/CS1 = VIH or CS2 = VIL

or /OE = VIH or /WE = VIL

-1

-

1

uA

Icc

Operating Power Supply

Current

/CS1 = VIL, CS2 = VIH,

VIN = VIH or VIL, II/O = 0mA

-

5

mA

ICC1

Average Operating Current

/CS1 = VIL, CS2 = VIH,

VIN = VIH or VIL

Cycle Time = Min, 100% duty,

IIO = 0mA

-

35

mA

ISB

TTL Standby Current

(TTL Input)

/CS1 = VIH or CS2 = VIL ,

VIN = VIH or VIL

-

0.5

mA

ISB1

Standby

HY62V8100B

/CS1 > Vcc - 0.2V or CS2 < 0.2V,

-

0.5

10

uA

Current

HY62V8100B-E

VIN > Vcc - 0.2V or

-

0.5

15

uA

(CMOS Input)

HY62V8100B-I

VIN < Vss + 0.2V

-

0.5

15

uA

VOL

Output Low Voltage

IOL = 2.1mA

-

0.4

V

VOH

Output High Voltage

IOH = -1mA

2.2

-

V

Note : Typical values are at Vcc = 3.3V, TA = 25

°C

CAPACITANCE

(Temp = 25

°C, f= 1.0MHz)

Symbol

Parameter

Condition

Max.

Unit

CIN

Input Capacitance

VIN = 0V

6

pF

COUT

Output Capacitance

VI/O = 0V

8

pF

Note : These parameters are sampled and not 100% tested

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