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PNZ263L Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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PNZ263L Datasheet(HTML) 1 Page - Panasonic Semiconductor |
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1 / 2 page  1 PNZ263L Darlington Phototransistor For optical control systems Darlington Phototransistors 50 Ω td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) Sig.IN RL VCC Sig.OUT (Input pulse) (Output pulse) 10% 90% td tr tf 3.0 ±0.3 2-0.8 max. 2-0.5 ±0.15 0.3 ±0.15 Unit : mm 1: Collector 2: Emitter 2.54 1 2 1.4 ±0.2 0.5 0.9 1.95 ±0.25 ø1.1 R0.5 2-0.8 max. Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit Collector to emitter voltage VCEO 20 V Emitter to collector voltage VECO 5V Collector current IC 30 mA Collector power dissipation PC 100 mW Operating ambient temperature Topr –25 to +80 ˚C Storage temperature Tstg –30 to +100 ˚C Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Conditions min typ max Unit Dark current ICEO VCE = 10V 0.1 0.5 µA Sensitivity to infrared emitters SIR*1 VCE = 10V, H = 3.75 µW/cm2 60 200 µA Peak sensitivity wavelength λ P VCE = 10V 850 nm Acceptance half angle θ Measured from the optical axis to the half power point 25 deg. Response time tr, tf*2 VCC = 10V, IC = 1mA, RL = 100Ω 150 µs Collector saturation voltage VCE(sat) IC = 100µA, H = 3.75 µW/cm2 0.7 1.5 V *1 Measurements were made using infrared light ( λ = 940 nm) as a light source. *2 Switching time measuring circuit Features Darlington output, high sensitivity Small size, thin side-view type package Adoption of visible light cutoff resin |
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