PNZ123S datasheet(2/2 Pages) PANASONIC

Part #	PNZ123S

Description	Silicon NPN Phototransistor

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Manufacturer	PANASONIC [Panasonic Semiconductor]

Direct Link	http://www.panasonic.com/industrial/

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Phototransistors

PNZ123S

tr — ICE(L)

10 3

10 2

10

1

Collector photo current

I

CE(L) (mA)

10 –1

110

10 –1

10 –2

VCC = 10V

Ta = 25˚C

tf — ICE(L)

10 3

10 2

10

1

Collector photo current

I

CE(L) (mA)

10 –1

110

10 –1

10 –2

VCC = 10V

Ta = 25˚C

ICE(L) — VCE

1600

1200

800

400

0

Collector to emitter voltage

V

CE (V)

020

16

812

424

Ta = 25˚C

T = 2856K

PC — Ta

60

50

40

30

20

10

Ambient temperature

Ta (˚C )

0

20406080

100

0

– 20

ICE(L) — L

10 4

10 3

10 2

10

Illuminance

L (lx)

10 2

10 3

10 4

1

10

VCE = 10V

Ta = 25˚C

T = 2856K

Spectral sensitivity characteristics

100

80

60

40

20

Wavelength

λ (nm)

400

600

800

1000

1200

0

200

VCE = 10V

Ta = 25˚C

– 20

0

40

80

20

60

100

ICE(L) — Ta

10 4

10 3

Ambient temperature

Ta (˚C )

VCE = 10V

T = 2856K

10 2

ICEO — Ta

10 3

10

1

10 2

Ambient temperature

Ta (˚C )

VCE = 10V

10 –1

– 20

0

40

80

20

60

100

0˚

10˚

20˚

30˚

40˚

50˚

60˚

70˚

80˚

90˚

Directivity characteristics

20

90

100

80

70

60

50

40

30

1750 lx

1500 lx

1250 lx

1000 lx

750 lx

500 lx

250 lx

L =2000 lx

L = 1500 lx

1000 lx

RL = 1kΩ

500

Ω

100

Ω

RL = 1kΩ

500

Ω

100

Ω

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