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CEF02N6 Datasheet(PDF) 1 Page - Chino-Excel Technology |
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1 / 5 page 600 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 600V , 1.5A , RDS(ON)=5 @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through hole ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS V Gate-Source Voltage VGS 30 V -Pulsed ID 1.5 A IDM A Drain-Source Diode Forward Current IS 4.5 A Maximum Power Dissipation PD W Operating and Storage Temperautre Range TJ,TSTG -65 to 150 C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient R JC R JA 4.3 65 /W C /W C Ω @Tc=25 C Derate above 25 C 29 0.23 W/ C Drain Current-Continuous S G D 6-117 Sep. 2002 4.5 CEF02N6 TO-220F S D G 6 |
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