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PNZ109CL Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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PNZ109CL Datasheet(HTML) 1 Page - Panasonic Semiconductor |
1 / 2 page 1 Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit Collector to emitter voltage VCEO 20 V Collector to base voltage VCBO 30 V Emitter to collector voltage VECO 3V Emitter to base voltage VEBO 5V Collector current IC 20 mA Collector power dissipation PC 100 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C PNZ109CL Silicon NPN Phototransistor For optical control systems Features High sensitivity : ICE(L) = 2 mA (min.) (at L = 500 lx) Wide directional sensitivity for easy use Fast response : tr = 5 µs (typ.) Signal mixing capability using base pin Small size (low in height) package Resin to cutoff visible light is used Phototransistors 50 Ω RL td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) VCC Sig.OUT Sig.IN (Input pulse) (Output pulse) 10% 90% td tr tf 2.54 ±0.25 1 2 3 3-ø0.45 ±0.05 Unit : mm 1: Emitter 2: Base 2: Collector Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Conditions min typ max Unit Dark current ICEO VCE = 10V 0.05 2 µA Collector photo current ICE(L) VCE = 10V, L = 500 lx*1 2.5 4 mA Peak sensitivity wave length λ P VCE = 10V 900 nm Acceptance half angle θ Measured from the optical axis to the half power point 80 deg. Rise time tr*2 VCC = 10V, ICE(L) = 5mA 5 µs Fall time tf*2 RL = 100Ω 6 µs Collector saturation voltage VCE(sat) ICE(L) = 1mA, L = 1000 lx*1 0.3 0.6 V *1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. *2 Switching time measurement circuit |
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