PNZ109CL datasheet(1/2 Pages) PANASONIC

Part #	PNZ109CL

Description	Silicon NPN Phototransistor

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Manufacturer	PANASONIC [Panasonic Semiconductor]

Direct Link	http://www.panasonic.com/industrial/

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Absolute Maximum Ratings (Ta = 25˚C)

Parameter

Symbol

Ratings

Unit

Collector to emitter voltage

VCEO

20

V

Collector to base voltage

VCBO

30

V

Emitter to collector voltage

VECO

3V

Emitter to base voltage

VEBO

5V

Collector current

IC

20

mA

Collector power dissipation

PC

100

mW

Operating ambient temperature

Topr

–25 to +85

˚C

Storage temperature

Tstg

–30 to +100

˚C

PNZ109CL

Silicon NPN Phototransistor

For optical control systems

Features

High sensitivity : ICE(L) = 2 mA (min.) (at L = 500 lx)

Wide directional sensitivity for easy use

Fast response : tr = 5 µs (typ.)

Signal mixing capability using base pin

Small size (low in height) package

Resin to cutoff visible light is used

Phototransistors

50

Ω

RL

td : Delay time

tr : Rise time (Time required for the collector photo current to

increase from 10% to 90% of its final value)

tf : Fall time (Time required for the collector photo current to

decrease from 90% to 10% of its initial value)

VCC

Sig.OUT

Sig.IN

(Input pulse)

(Output pulse)

10%

90%

td

tr

tf

2.54

±0.25

1

2

3

3-ø0.45

±0.05

Unit : mm

1: Emitter

2: Base

2: Collector

Electro-Optical Characteristics (Ta = 25˚C)

Parameter

Symbol

Conditions

min

typ

max

Unit

Dark current

ICEO

VCE = 10V

0.05

2

µA

Collector photo current

ICE(L)

VCE = 10V, L = 500 lx*1

2.5

4

mA

Peak sensitivity wave length

λ

P

VCE = 10V

900

nm

Acceptance half angle

θ

Measured from the optical axis to the half power point

80

deg.

Rise time

tr*2

VCC = 10V, ICE(L) = 5mA

5

µs

Fall time

tf*2

RL = 100Ω

6

µs

Collector saturation voltage

VCE(sat)

ICE(L) = 1mA, L = 1000 lx*1

0.3

0.6

V

*1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.

*2 Switching time measurement circuit

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