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PNA4S13M Datasheet(PDF) 1 Page - Panasonic Semiconductor

Part # PNA4S13M
Description  Bipolar Integrated Circuit with Photodetection Function
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Manufacturer  PANASONIC [Panasonic Semiconductor]
Direct Link  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

PNA4S13M Datasheet(HTML) 1 Page - Panasonic Semiconductor

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PNA4S11M Series
(PNA4S11M/4S12M/4S13M/4S14M)
Bipolar Integrated Circuit with Photodetection Function
For infrared remote control systems
Photo IC
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol
Ratings
Unit
Power supply voltage
VCC
– 0.5 to +7
V
Power dissipation
PD
200
mW
Operating ambient temperature
Topr
–20 to +60
˚C
Storage temperature
Tstg
– 30 to +70
˚C
1: VO
2: VCC
3: GND
4: GND
Unit : mm
5.2
(2.6)
3.47
R1.7
12
34
400
µs
400
µs
Fig.2
Fig.1
Main Characteristics (Ta = 25˚C VCC = 5V)
Parameter
Symbol
Conditions
min
typ
max
Unit
Operating supply voltage
VCC
4.7
5.0
5.3
V
Current consumption
ICC
No signal condition
1.8
2.4
3.0
mA
Maximum reception distance
Lmax*1
7.0
m
Low-level output voltage
VOL*2
L
≤7.0m, 10L=400µA
0.35
0.5
V
High-level output voltage
VOH
No signal condition
4.8
5.0
VCC
V
Low-level pulse width
TWL*1
L=7.0m, 16Pulse
200
400
600
µs
High-level pulse width
TWH*1
L=7.0m, 16Pulse
200
400
600
µs
PNA4S11M
36.7
Carrier frequency
PNA4S12M
f0
38.0
kHz
PNA4S13M
40.0
PNA4S14M
56.9
*1 Fig.1 burst wave, L=L
max, 16 pulses
Carrier wave : fo
Features
Surface-mounting type for reflow soldering
Space saved by miniaturization
Ready for automatic mounting
*2 Fig.2 continuous wave, L
≤L
max
Carrier wave : fo


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