FEATURES

・

High Voltage Operation : VDS=28V

・

High Gain: 15.0dB(typ.) at Pout=46dBm(Avg.)

・

Broad Frequency Range : 2100 to 2200MHz

・

Proven Reliability

DESCRIPTION

The FLL21E180IU is a high power GaAs FET that offers

high efficiency, ease of matching, greater consistency and

broad bandwidth for high power L-band amplifiers.

This device is target for high voltage, low current operation in

digitally modulated base station. This product is ideally suited

for W-CDMA base station amplifiers while offering high gain long

term reliability and ease for use.

ABSOLUTE MAXIMUM RATINGS

Item

Symbol

Condition

Rating

Unit

Drain-Source Voltage

32

V

Gate-Source Voltage

-3

V

Total Power Dissipation

230

W

Storage Temperature

-65 to +175

Channel Temperature

200

Item

Symbol

Condition

Limit

Unit

min.

Typ.

Max.

Pinch-Off Voltage

-0.1

-0.2

-0.5

V

Gate-Source Breakdown Voltage

-5

V

3rd Order Inter modulation Distortion

-

-34

-30

dBc

Power Gain

Gp

14.0

15.0

-

dB

Drain Efficiency

Pout=46dBm(Avg.)

-

26.0

-

%

Adjacent Channel Leakage Power Ratio

ACLR

note

-

-35

-

dBc

Thermal Resistance

Channel to Case

-

0.55

0.65

Note 1 : IM3 ACLR and Gain test condition as follows:

IM3 & Gain : fo=2.1325GHz, f1=2.1475GHz W-CDMA(3GPP3.4 12-00) BS-164ch

non clipping modulation measured over 3.84MHz at fo-15MHz and fI+15MHz.

ACLR : fo=2.1325GHz W-CDMA(3GPP3.4 12-00) BS-1 64ch non clipping modulation,

measured over 3.84MHz at fo+/-5MHz.

Edition 1.2

Mar 2004

1

Item

Symbol

Condition

Limit

Unit

DC Input Voltage

<28

V

Forward Gate Current

Ω

<705

mA

Reverse Gate Current

Ω

>-64

mA

Channel Temperature

155

FLL21E180IU

High Voltage - High Power GaAs FET