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MX29LV160CBTC-70G Datasheet(PDF) 8 Page - Macronix International

Part No. MX29LV160CBTC-70G
Description  16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
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Maker  MCNIX [Macronix International]
Homepage  http://www.macronix.com
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P/N:PM1186
MX29LV160C T/B
REV. 1.2, JAN. 19, 2006
QUERY COMMAND AND COMMON FLASH
INTERFACE (CFI) MODE
MX29LV160C T/B is capable of operating in the CFI mode.
This mode all the host system to determine the manu-
facturer of the device such as operating parameters and
configuration. Two commands are required in CFI mode.
Query command of CFI mode is placed first, then the
Reset command exits CFI mode.These are described in
Table 4.
The single cycle Query command is valid only when the
device is in the Read mode, including Erase Suspend,
Standby mode, and Automatic Select mode; however, it
is ignored otherwise.
The Reset command exits from the CFI mode to the
Read mode, or Erase Suspend mode, or Automatic Se-
lect mode. The command is valid only when the device
is in the CFI mode.
Table 4-1. CFI mode: Identification Data Values
(All values in these tables are in hexadecimal)
Description
Address
Address
Data
(Byte Mode)
(Word Mode)
Query-unique ASCII string "QRY"
20
10
0051
22
11
0052
24
12
0059
Primary vendor command set and control interface ID code
26
13
0002
28
14
0000
Address for primary algorithm extended query table
2A
15
0040
2C
16
0000
Alternate vendor command set and control interface ID code (none)
2E
17
0000
30
18
0000
Address for secondary algorithm extended query table (none)
32
19
0000
34
1A
0000
Table 4-2. CFI Mode: System Interface Data Values
(All values in these tables are in hexadecimal)
Description
Address
Address
Data
(Byte Mode)
(Word Mode)
VCC supply, minimum (2.7V)
36
1B
0027
VCC supply, maximum (3.6V)
38
1C
0036
VPP supply, minimum (none)
3A
1D
0000
VPP supply, maximum (none)
3C
1E
0000
Typical timeout for single word/byte write (2N us)
3E
1F
0004
Typical timeout for Minimum size buffer write (2N us) (not supported)
40
20
0000
Typical timeout for individual sector erase (2N ms)
42
21
000A
Typical timeout for full chip erase (2N ms)
44
22
0000
Maximum timeout for single word/byte write times (2N X Typ)
46
23
0005
Maximum timeout for buffer write times (2N X Typ)
48
24
0000
Maximum timeout for individual sector erase times (2N X Typ)
4A
25
0004
Maximum timeout for full chip erase times (not supported)
4C
26
0000




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