MX29LV004CB datasheet(10/59 Pages) MCNIX

Part #	MX29LV004CB

Description	4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

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Manufacturer	MCNIX [Macronix International]

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P/N:PM1148

MX29LV004C T/B

REV. 1.3, APR. 24, 2006

operation is complete. If RESET# is asserted when a

program or erase operation is completed within a time of

tREADY (not during Embedded Algorithms).The system

can read data tRH after the RESET# pin returns to VIH.

Refer to the AC Characteristics tables for RESET#

parameters and to Figure 24 for the timing diagram.

READ/RESET COMMAND

The read or reset operation is initiated by writing the read/

reset command sequence into the command register.

Microprocessor read cycles retrieve array data. The de-

vice remains enabled for reads until the command regis-

ter contents are altered.

If program-fail or erase-fail happen, the write of F0H will

reset the device to abort the operation. A valid com-

mand must then be written to place the device in the

desired state.

SILICON-ID READ COMMAND

Flash memories are intended for use in applications where

the local CPU alters memory contents. As such, manu-

facturer and device codes must be accessible while the

device resides in the target system. PROM program-

mers typically access signature codes by raising A9 to

a high voltage (VID). However, multiplexing high voltage

onto address lines is not generally desired system de-

sign practice.

The MX29LV004C T/B contains a Silicon-ID-Read op-

eration to supple traditional PROM programming meth-

odology. The operation is initiated by writing the read

silicon ID command sequence into the command regis-

ter. Following the command write, a read cycle with

A1=VIL, A0=VIL retrieves the manufacturer code of C2H.

A read cycle with A1=VIL, A0=VIH returns the device

code of B5H for MX29LV004CT, B6H for MX29LV004CB.

SET-UP AUTOMATIC CHIP/SECTOR ERASE

COMMANDS

Chip erase is a six-bus cycle operation. There are two

"unlock" write cycles. These are followed by writing the

"set-up" command 80H. Two more "unlock" write cycles

are then followed by the chip erase command 10H or

sector erase command 30H.

The Automatic Chip Erase does not require the device to

be entirely pre-programmed prior to executing the Auto-

matic Chip Erase. Upon executing the Automatic Chip

Erase, the device will automatically program and verify

the entire memory for an all-zero data pattern. When the

device is automatically verified to contain an all-zero pat-

tern, a self-timed chip erase and verify begin. The erase

and verify operations are completed when the data on

Q7 is "1" at which time the device returns to the Read

mode. The system is not required to provide any control

or timing during these operations.

When using the Automatic Chip Erase algorithm, note

that the erase automatically terminates when adequate

erase margin has been achieved for the memory array(no

erase verification command is required).

If the Erase operation was unsuccessful, the data on Q5

is "1"(see Table 7), indicating the erase operation ex-

ceed internal timing limit.

The automatic erase begins on the rising edge of the last

WE# or CE# pulse, whichever happens first in the com-

mand sequence and terminates when the data on Q7 is

"1" and the data on Q6 stops toggling for two consecu-

tive read cycles, at which time the device returns to the

Read mode.

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