Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

MX29LV002NCTQC-70 Datasheet(PDF) 9 Page - Macronix International

Part # MX29LV002NCTQC-70
Description  2M-BIT [256K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
Download  58 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  MCNIX [Macronix International]
Direct Link  http://www.macronix.com
Logo MCNIX - Macronix International

MX29LV002NCTQC-70 Datasheet(HTML) 9 Page - Macronix International

Back Button MX29LV002NCTQC-70 Datasheet HTML 5Page - Macronix International MX29LV002NCTQC-70 Datasheet HTML 6Page - Macronix International MX29LV002NCTQC-70 Datasheet HTML 7Page - Macronix International MX29LV002NCTQC-70 Datasheet HTML 8Page - Macronix International MX29LV002NCTQC-70 Datasheet HTML 9Page - Macronix International MX29LV002NCTQC-70 Datasheet HTML 10Page - Macronix International MX29LV002NCTQC-70 Datasheet HTML 11Page - Macronix International MX29LV002NCTQC-70 Datasheet HTML 12Page - Macronix International MX29LV002NCTQC-70 Datasheet HTML 13Page - Macronix International Next Button
Zoom Inzoom in Zoom Outzoom out
 9 / 58 page
background image
9
P/N:PM1204
MX29LV002C/002NC T/B
REV. 1.0, JUN. 30, 2005
operation is complete. If RESET# is asserted when a
program or erase operation is completed within a time of
tREADY (not during Embedded Algorithms).The system
can read data tRH after the RESET# pin returns to VIH.
Refer to the AC Characteristics tables for RESET#
parameters and to Figure 24 for the timing diagram.
READ/RESET COMMAND
The read or reset operation is initiated by writing the read/
reset command sequence into the command register.
Microprocessor read cycles retrieve array data. The de-
vice remains enabled for reads until the command regis-
ter contents are altered.
If program-fail or erase-fail happen, the write of F0H will
reset the device to abort the operation. A valid com-
mand must then be written to place the device in the
desired state.
SILICON-ID READ COMMAND
Flash memories are intended for use in applications where
the local CPU alters memory contents. As such, manu-
facturer and device codes must be accessible while the
device resides in the target system. PROM program-
mers typically access signature codes by raising A9 to
a high voltage (VID). However, multiplexing high voltage
onto address lines is not generally desired system de-
sign practice.
The MX29LV002C T/B contains a Silicon-ID-Read op-
eration to supple traditional PROM programming meth-
odology. The operation is initiated by writing the read
silicon ID command sequence into the command regis-
ter. Following the command write, a read cycle with
A1=VIL, A0=VIL retrieves the manufacturer code of C2H.
A read cycle with A1=VIL, A0=VIH returns the device
code of 59H for MX29LV002CT, 5AH for MX29LV002CB.
SET-UP AUTOMATIC CHIP/SECTOR ERASE
COMMANDS
Chip erase is a six-bus cycle operation. There are two
"unlock" write cycles. These are followed by writing the
"set-up" command 80H. Two more "unlock" write cycles
are then followed by the chip erase command 10H or
sector erase command 30H.
The Automatic Chip Erase does not require the device to
be entirely pre-programmed prior to executing the Auto-
matic Chip Erase. Upon executing the Automatic Chip
Erase, the device will automatically program and verify
the entire memory for an all-zero data pattern. When the
device is automatically verified to contain an all-zero pat-
tern, a self-timed chip erase and verify begin. The erase
and verify operations are completed when the data on
Q7 is "1" at which time the device returns to the Read
mode. The system is not required to provide any control
or timing during these operations.
When using the Automatic Chip Erase algorithm, note
that the erase automatically terminates when adequate
erase margin has been achieved for the memory array(no
erase verification command is required).
If the Erase operation was unsuccessful, the data on Q5
is "1"(see Table 7), indicating the erase operation ex-
ceed internal timing limit.
The automatic erase begins on the rising edge of the last
WE# or CE# pulse, whichever happens first in the com-
mand sequence and terminates when the data on Q7 is
"1" and the data on Q6 stops toggling for two consecu-
tive read cycles, at which time the device returns to the
Read mode.


Similar Part No. - MX29LV002NCTQC-70

ManufacturerPart #DatasheetDescription
logo
Macronix International
MX29LV004B MCNIX-MX29LV004B Datasheet
724Kb / 54P
   4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV004BQC-55R MCNIX-MX29LV004BQC-55R Datasheet
724Kb / 54P
   4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV004BQC-70 MCNIX-MX29LV004BQC-70 Datasheet
724Kb / 54P
   4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV004BQC-90 MCNIX-MX29LV004BQC-90 Datasheet
724Kb / 54P
   4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV004BQI-70 MCNIX-MX29LV004BQI-70 Datasheet
724Kb / 54P
   4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
More results

Similar Description - MX29LV002NCTQC-70

ManufacturerPart #DatasheetDescription
logo
Macronix International
MX29LV400T MCNIX-MX29LV400T Datasheet
1Mb / 59P
   4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV401T MCNIX-MX29LV401T Datasheet
986Kb / 56P
   4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV400CT MCNIX-MX29LV400CT Datasheet
888Kb / 68P
   4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX28F2000T MCNIX-MX28F2000T Datasheet
115Kb / 31P
   2M-BIT [256K x 8] CMOS FLASH MEMORY
MX29F022 MCNIX-MX29F022 Datasheet
595Kb / 46P
   2M-BIT[256K x 8]CMOS FLASH MEMORY
MX29F002 MCNIX-MX29F002 Datasheet
608Kb / 51P
   2M-BIT [256K x 8] CMOS FLASH MEMORY
MX28F2000P MCNIX-MX28F2000P Datasheet
191Kb / 33P
   2M-BIT [256K x 8] CMOS FLASH MEMORY
MX29F022T MCNIX-MX29F022T_98 Datasheet
231Kb / 38P
   2M-BIT[256K x 8]CMOS FLASH MEMORY
logo
Force Technologies Ltd
FT29F200CT FORCE-FT29F200CT Datasheet
2Mb / 49P
   2M-BIT [256K x 8 / 128K x 16] SINGLE VOLTAGE 5V ONLY FLASH MEMORY
logo
Macronix International
MX29LV320MTB MCNIX-MX29LV320MTB Datasheet
984Kb / 71P
   32M-BIT [4M x 8/2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com