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MX29F400CTMI-90G Datasheet(PDF) 1 Page - Macronix International |
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MX29F400CTMI-90G Datasheet(HTML) 1 Page - Macronix International |
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1 / 42 page  1 P/N:PM1200 REV. 1.0, DEC. 20, 2005 MX29F400C T/B 4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 5V ONLY BOOT SECTOR FLASH MEMORY • Ready/Busy pin (RY/BY#) - Provides a hardware method of detecting program or erase cycle completion • Sector protect/chip unprotect for 5V only system • Sector protection - Hardware method to disable any combination of sectors from program or erase operations - Temporary sector unprotect allows code changes in previously locked sectors • 100,000 minimum erase/program cycles • Latch-up protected to 100mA from -1V to VCC+1V • Boot Code Sector Architecture - T = Top Boot Sector - B = Bottom Boot Sector • Low VCC write inhibit is equal to or less than 3.2V • Package type: - 44-pin SOP - 48-pin TSOP - All Pb-free devices are RoHS Compliant • Compatibility with JEDEC standard - Pinout and software compatible with single-power supply Flash • 20 years data retention FEATURES • 524,288 x 8/262,144 x 16 switchable • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 55/70/90ns • Compatible with MX29F400T/B device • Low power consumption - 40mA maximum active current(5MHz) - 1uA typical standby current • Command register architecture - Byte/word Programming (9us/11us typical) - Sector Erase (Sector structure 16K-Bytex1, 8K- Bytex2, 32K-Bytex1, and 64K-Byte x7) • Auto Erase (chip & sector) and Auto Program - Automatically erase any combination of sectors with Erase Suspend capability. - Automatically program and verify data at specified address • Erase suspend/Erase Resume - Suspends an erase operation to read data from, or program data to, another sector that is not being erased, then resumes the erase • Status Reply - Data# Polling & Toggle bit for detection of program and erase cycle completion GENERAL DESCRIPTION The MX29F400C T/B is a 4-mega bit Flash memory or- ganized as 512K bytes of 8 bits or 256K words of 16 bits. MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29F400C T/B is packaged in 44-pin SOP, 48-pin TSOP. It is designed to be reprogrammed and erased in system or in standard EPROM programmers. The standard MX29F400C T/B offers access time as fast as 55ns, allowing operation of high-speed micropro- cessors without wait states. To eliminate bus conten- tion, the MX29F400C T/B has separate chip enable (CE#) and output enable (OE#) controls. MXIC's Flash memories augment EPROM functionality with in-circuit electrical erasure and programming. The MX29F400C T/B uses a command register to manage this functionality. The command register allows for 100% TTL level control inputs and fixed power supply levels during erase and programming, while maintaining maxi- mum EPROM compatibility. MXIC Flash technology reliably stores memory contents even after 100,000 erase and program cycles. The MXIC cell is designed to optimize the erase and programming mechanisms. In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and program operations produces reliable cy- cling. The MX29F400C T/B uses a 5.0V ±10% VCC sup- ply to perform the High Reliability Erase and auto Pro- gram/Erase algorithms. The highest degree of latch-up protection is achieved with MXIC's proprietary non-epi process. Latch-up pro- tection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC + 1V. |
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