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MX26LV160BXBC-70G Datasheet(PDF) 6 Page - Macronix International |
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MX26LV160BXBC-70G Datasheet(HTML) 6 Page - Macronix International |
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6 / 48 page  6 P/N:PM1090 MX26LV160 REV. 1.0, NOV. 08, 2004 AUTOMATIC PROGRAMMING The MX26LV160 is word/byte programmable using the Automatic Programming algorithm. The Automatic Pro- gramming algorithm makes the external system do not need to have time out sequence nor to verify the data programmed. AUTOMATIC PROGRAMMING ALGORITHM MXIC's Automatic Programming algorithm requires the user to only write program set-up commands (including 2 unlock write cycle and A0H) and a program command (program data and address). The device automatically times the programming pulse width, provides the pro- gram verification, and counts the number of sequences. A status bit similar to DATA# polling and a status bit toggling between consecutive read cycles, provide feed- back to the user as to the status of the programming operation. Refer to write operation status, table 7, for more information on these status bits. AUTOMATIC CHIP ERASE The entire chip is bulk erased using 10 ms erase pulses according to MXIC's Automatic Chip Erase algorithm. The Automatic Erase algorithm automatically programs the entire array prior to electrical erase. The timing and verification of electrical erase are controlled internally within the device. AUTOMATIC SECTOR ERASE The MX26LV160 is sector(s) erasable using MXIC's Auto Sector Erase algorithm. The Automatic Sector Erase algorithm automatically programs the specified sector(s) prior to electrical erase. The timing and verification of electrical erase are controlled internally within the de- vice. An erase operation can erase one sector, multiple sectors, or the entire device. AUTOMATIC ERASE ALGORITHM MXIC's Automatic Erase algorithm requires the user to write commands to the command register using stan- dard microprocessor write timings. The device will auto- matically pre-program and verify the entire array. Then the device automatically times the erase pulse width, provides the erase verification, and counts the number of sequences. A status bit toggling between consecutive read cycles provides feedback to the user as to the sta- tus of the erasing operation. Register contents serve as inputs to an internal state- machine which controls the erase and programming cir- cuitry. During write cycles, the command register inter- nally latches address and data needed for the program- ming and erase operations. During a system write cycle, addresses are latched on the falling edge, and data are latched on the rising edge of WE# or CE#, whichever happens first. MXIC's high speed Flash technology combines years of EPROM experience to produce the highest levels of quality, reliability, and cost effectiveness.The MX26LV160 electrically erases all bits simultaneously using Fowler- Nordheim tunneling. The bytes are programmed by us- ing the EPROM programming mechanism of hot electron injection. During a program cycle, the state-machine will control the program sequences and command register will not respond to any command set. After the state machine has completed its task, it will allow the command regis- ter to respond to its full command set. AUTOMATIC SELECT The auto select mode provides manufacturer and de- vice identification, through identifier codes output on Q7~Q0. This mode is mainly adapted for programming equipment on the device to be programmed with its pro- gramming algorithm.When programming by high voltage method, automatic select mode requires VID (11V to 12V) on address pin A9 and other address pin A6, A1 and A0 as referring to Table 3. In addition, to access the automatic select codes in-system, the host can issue the automatic select command through the command register without requiring VID, as shown in table 4. |
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