MX26LV400BXBC-55 datasheet(5/46 Pages) MCNIX

Part #	MX26LV400BXBC-55

Description	4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY

Download	46 Pages

Scroll/Zoom	100%

Manufacturer	MCNIX [Macronix International]

Direct Link	http://www.macronix.com

Logo

5 / 46 page

5

P/N:PM1094

MX26LV400

REV. 1.0, NOV. 08, 2004

AUTOMATIC PROGRAMMING

The MX26LV400 is word/byte programmable using the

Automatic Programming algorithm. The Automatic Pro-

gramming algorithm makes the external system do not

need to have time out sequence nor to verify the data

programmed.

AUTOMATIC PROGRAMMING ALGORITHM

MXIC's Automatic Programming algorithm requires the

user to only write program set-up commands (including

2 unlock write cycle and A0H) and a program command

(program data and address). The device automatically

times the programming pulse width, provides the pro-

gram verification, and counts the number of sequences.

A status bit similar to DATA# polling and a status bit

toggling between consecutive read cycles, provide feed-

back to the user as to the status of the programming

operation. Refer to write operation status, table 7, for more

information on these status bits.

AUTOMATIC CHIP ERASE

The entire chip is bulk erased using 10 ms erase pulses

according to MXIC's Automatic Chip Erase algorithm.

The Automatic Erase algorithm automatically programs

the entire array prior to electrical erase. The timing and

verification of electrical erase are controlled internally

within the device.

AUTOMATIC SECTOR ERASE

The MX26LV400 is sector(s) erasable using MXIC's Auto

Sector Erase algorithm. The Automatic Sector Erase

algorithm automatically programs the specified sector(s)

prior to electrical erase. The timing and verification of

electrical erase are controlled internally within the de-

vice. An erase operation can erase one sector, multiple

sectors, or the entire device.

AUTOMATIC ERASE ALGORITHM

MXIC's Automatic Erase algorithm requires the user to

write commands to the command register using stan-

dard microprocessor write timings. The device will auto-

matically pre-program and verify the entire array. Then

the device automatically times the erase pulse width,

provides the erase verification, and counts the number of

sequences. A status bit toggling between consecutive

read cycles provides feedback to the user as to the sta-

tus of the erasing operation.

Register contents serve as inputs to an internal state-

machine which controls the erase and programming cir-

cuitry. During write cycles, the command register inter-

nally latches address and data needed for the program-

ming and erase operations. During a system write cycle,

addresses are latched on the falling edge, and data are

latched on the rising edge of WE# or CE#, whichever

happens first.

MXIC's high speed Flash technology combines years of

EPROM experience to produce the highest levels of

quality, reliability, and cost effectiveness.The MX26LV400

electrically erases all bits simultaneously using Fowler-

Nordheim tunneling. The bytes are programmed by us-

ing the EPROM programming mechanism of hot electron

injection.

During a program cycle, the state-machine will control

the program sequences and command register will not

respond to any command set. After the state machine

has completed its task, it will allow the command regis-

ter to respond to its full command set.

AUTOMATIC SELECT

The auto select mode provides manufacturer and de-

vice identification, through identifier codes output on

Q7~Q0. This mode is mainly adapted for programming

equipment on the device to be programmed with its pro-

gramming algorithm.When programming by high voltage

method, automatic select mode requires VID (11V to

12V) on address pin A9 and other address pin A6, A1

and A0 as referring to Table 3. In addition, to access the

automatic select codes in-system, the host can issue

the automatic select command through the command

register without requiring VID, as shown in table 4.

Similar Part No. - MX26LV400BXBC-55

Manufacturer	Part #	Datasheet	Description
Macronix International	MX26LV004B	459Kb / 43P	4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
	MX26LV004BQC-55	459Kb / 43P	4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
	MX26LV004BQC-55G	459Kb / 43P	4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
	MX26LV004BQC-70	459Kb / 43P	4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
	MX26LV004BQC-70G	459Kb / 43P	4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY

More results

Similar Description - MX26LV400BXBC-55

Manufacturer	Part #	Datasheet	Description
Macronix International	MX29F400CT	442Kb / 42P	4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 5V ONLY BOOT SECTOR FLASH MEMORY
	MX26LV160AT	741Kb / 61P	16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY
	MX26LV160	700Kb / 48P	16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY
	MX26LV040	588Kb / 40P	4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
	MX26LV004T	459Kb / 43P	4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
	MX29F400T	710Kb / 44P	4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY
	MX29LA128MT	411Kb / 76P	128M-BIT SINGLE VOLTAGE 3V ONLY BOOT SECTOR FLASH MEMORY
	MX29F4000	247Kb / 36P	4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
	MX26LV800AT	558Kb / 50P	8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
	MX26LV008T	300Kb / 43P	8M-BIT [1M x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY

More results

MX26LV400BXBC-55 Datasheet(PDF) 5 Page - Macronix International

MX26LV400BXBC-55 Datasheet(HTML) 5 Page - Macronix International

Similar Part No. - MX26LV400BXBC-55

Similar Description - MX26LV400BXBC-55

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46

Datasheet Download

Link URL