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STR4A60S Datasheet(PDF) 2 Page - SemiWell Semiconductor |
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STR4A60S Datasheet(HTML) 2 Page - SemiWell Semiconductor |
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2 / 5 page  Electrical Characteristics Symbol Items Conditions Ratings Unit Min. Typ. Max. IDRM Repetitive Peak Off-State Current VD = VDRM, Single Phase, Half Wave TJ = 125 °C ── 1.0 mA VTM Peak On-State Voltage IT = 6 A, Inst. Measurement ─ ─ 1.6 V I+GT1 Ⅰ Gate Trigger Current VD = 6 V, RL=10 Ω ── 5 mA I -GT1 Ⅱ ── 5 I -GT3 Ⅲ ── 5 I+GT3 Ⅳ ─ 812 V+GT1 Ⅰ Gate Trigger Voltage VD = 6 V, RL=10 Ω ── 1.4 V V-GT1 Ⅱ ── 1.4 V-GT3 Ⅲ ── 1.4 V+GT3 Ⅳ ─ 1.6 2.0 VGD Non-Trigger Gate Voltage TJ = 125 °C, VD = 1/2 VDRM 0.2 ── V (dv/dt)c Critical Rate of Rise Off-State Voltage at Commutation TJ = 125 °C, [di/dt]c = -0.5 A/ms, VD=2/3 VDRM 5 ── V/㎲ IH Holding Current ── 10 mA Rth(j-c) Thermal Impedance Junction to case ── 3.5 °C/W STR4A60S 2/5 |
Similar Part No. - STR4A60S |
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Similar Description - STR4A60S |
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