SCF10C60 datasheet(1/5 Pages) SEMIWELL

Part #	SCF10C60

Description	Silicon Controlled Rectifiers

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Manufacturer	SEMIWELL [SemiWell Semiconductor]

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Absolute Maximum Ratings ( T

J = 25°C unless otherwise specified )

Symbol

Parameter

Condition

Ratings

Units

VDRM

Repetitive Peak Off-State Voltage

600

V

IT(AV)

Average On-State Current

Half Sine Wave : TC = 86 °C

6.4

A

IT(RMS)

R.M.S On-State Current

180° Conduction Angle

10

A

ITSM

Surge On-State Current

1/2 Cycle, 60Hz, Sine Wave

Non-Repetitive

110

A

I2t

I2t for Fusing

t = 8.3ms

60

A2s

di/dt

Critical rate of rise of on-state current

50

A/㎲

PGM

Forward Peak Gate Power Dissipation

5

W

PG(AV)

Forward Average Gate Power Dissipation

0.5

W

IFGM

Forward Peak Gate Current

2

A

VRGM

Reverse Peak Gate Voltage

5.0

V

VISO

Isolation Breakdown Voltage(R.M.S.)

A.C. 1 minute

1500

V

TJ

Operating Junction Temperature

- 40 ~ 125

°C

TSTG

Storage Temperature

- 40 ~ 150

°C

SCF10C60

Aug, 2003. Rev. 1

Features

◆

Repetitive Peak Off-State Voltage : 600V

◆

R.M.S On-State Current ( IT(RMS)= 10 A )

◆

Low On-State Voltage (1.4V(Typ.)@ ITM)

◆

Isolation Voltage ( VISO = 1500V AC )

General Description

Standard gate triggering SCR is fully isolated package suitable for

the application where requiring high bidirectional blocking voltage

capability and also suitable for over voltage protection ,motor con-

trol circuit in power tool, inrush current limit circuit and heating

control system.

3. Gate

1. Cathode

Symbol

○

1/5

SemiWell Semiconductor

Silicon Controlled Rectifiers

TO-220F

1

2

3

○

2. Anode

Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.

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