SBP13007-H1 datasheet(2/6 Pages) SEMIWELL

Part #	SBP13007-H1

Description	High Voltage Fast-Switching NPN Power Transistor

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Manufacturer	SEMIWELL [SemiWell Semiconductor]

Direct Link	http://www.semiwellsemi.co.kr

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2 / 6 page

Electrical Characteristics ( T

C = 25 °C unless otherwise noted )

Symbol

Parameter

Condition

Min

Typ

Max

Units

ICEV

Collector Cut-off Current

( VBE = - 1.5V )

VCE = 700V

TC = 100 °C

-

1.0

5.0

mA

VCEO(sus)

Collector-Emitter Sustaining Voltage

( IB = 0 )

IC = 10 mA

400

--

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC = 2.0A

IB = 0.4A

IC = 5.0A

IB = 1.0A

IC = 8.0A

IB = 2.0A

IC = 5.0A

IB = 1.0A

TC = 100 °C

-

0.5

1.0

2.5

V

VBE(sat)

Base-Emitter Saturation Voltage

IC = 2.0A

IB = 0.4A

IC = 5.0A

IB = 1.0A

IC = 5.0A

IB = 1.0A

TC = 100 °C

--

1.2

1.6

1.5

V

hFE

DC Current Gain

IC = 2.0A

VCE = 5V

IC = 5.0A

VCE = 5V

10

5-

40

ts

tf

Resistive Load

Storage Time

Fall Time

IC = 5.0A

VCC = 125V

IB1 = 1.0A

IB2 = - 1.0A

TP = 25㎲

-

1.3

0.17

2.5

0.4

㎲

ts

tf

Inductive Load

Storage Time

Fall Time

VCC = 15V

IC = 5.0A

IB1 = 1.0A

IB2 = -2.5A

LC = 0.35mH

Vclamp = 300V

-

0.6

0.06

1.8

0.12

㎲

ts

tf

Inductive Load

Storage Time

Fall Time

VCC = 15V

IC = 5.0A

IB1= 1.0A

IB2 = -2.5A

LC = 0.35mH

Vclamp = 300V

TC = 100 °C

-

0.8

0.07

2.5

0.15

㎲

SBP13007-H1

2/6

※ Notes :

Pulse Test : Pulse width ≤ 300㎲, Duty cycle ≤ 2%

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