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SBW13009 Datasheet(PDF) 2 Page - SemiWell Semiconductor |
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SBW13009 Datasheet(HTML) 2 Page - SemiWell Semiconductor |
2 / 6 page Electrical Characteristics ( T C = 25 °C unless otherwise noted ) Symbol Parameter Condition Min Typ Max Units ICEV Collector Cut-off Current ( VBE = - 1.5V ) VCE = 700V VCE = 700V TC = 100 °C - - 1.0 5.0 mA VCEO(sus) Collector-Emitter Sustaining Voltage ( IB = 0 ) IC = 10 mA 400 -- V VCE(sat) Collector-Emitter Saturation Voltage IC = 5.0A IB = 1.0A IC = 8.0A IB = 1.6A IC = 12A IB = 3.0A IC = 8.0A IB = 1.6A TC = 100 °C - - 0.5 1.0 1.5 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC = 5.0A IB = 1.0A IC = 8.0A IB = 1.6A IC = 8.0A IB = 1.6A TC = 100 °C -- 1.2 1.6 1.5 V hFE DC Current Gain IC = 5.0A VCE = 5V IC = 8.0A VCE = 5V 10 6 - 30 30 ts tf Resistive Load Storage Time Fall Time IC = 8.0A VCC = 125V IB1 = 1.6A IB2 = - 1.6A TP = 25㎲ - 1.5 0.16 3.0 0.4 ㎲ ts tf Inductive Load Storage Time Fall Time VCC = 15V IC = 8.0A IB1= 1.6A VBE(off) = 5V LC = 0.2mH Vclamp = 300V - 0.6 0.04 2.0 0.1 ㎲ ts tf Inductive Load Storage Time Fall Time VCC = 15V IC = 8.0A IB1= 1.6A VBE(off) = 5V LC = 0.2mH Vclamp = 300V TC = 100 °C - 0.8 0.05 2.5 0.15 ㎲ SBW13009 2/6 ※ Notes : Pulse Test : Pulse width ≤ 300㎲, Duty cycle ≤ 2% |
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