© 2006 California Micro Devices Corp. All rights reserved.

02/06/06

490 N. McCarthy Blvd., Milpitas, CA 95035-5112

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Tel: 408.263.3214

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Fax: 408.263.7846

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www.cmd.com

3

CM1436

Specifications

Note 2: ESD applied to input and output pins with respect to GND, one at a time.

Note 3: These parameters are guaranteed by design and characterization.

Note 4: Attenuation / RF curves characterized by a network analyzer using microprobes.

Note 5: These parameters are NOT guaranteed by design, characterization and production.

ABSOLUTE MAXIMUM RATINGS

PARAMETER

RATING

UNITS

Storage Temperature Range

-65 to +150

°C

DC Power per Resistor

100

mW

Package DC Power Rating

300

mW

STANDARD OPERATING CONDITIONS

PARAMETER

RATING

UNITS

Operating Temperature Range

-40 to +85

°C

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

R

Resistance

160

200

240

Ω

C

Capacitance

At 2.5V DC, 1MHz, 30mV AC

12

15

18

pF

Diode Standoff Voltage

V

Diode Leakage Current (reverse

bias)

0.1

1

μA

Signal Voltage

Positive Clamp

Negative Clamp

5.6

-0.4

6.8

-0.8

9.0

-1.5

V

V

In-system ESD Withstand Voltage

a) Human Body Model, MIL-STD-

883, Method 3015

b) Contact Discharge per IEC

61000-4-2 Level 4

Notes 2 and 3

±30

±15

kV

kV

Cut-off Frequency

R = 200

Ω, C = 15pF;

Note 3

100

MHz

Absolute Attenuation @ 1GHz from

0dB Level

DC Bias = 0V; Notes 1, 4 and 5

35

dB

6GHz

Absolute Attenuation @ 800MHz to

6GHz from 0dB Level

DC Bias = 0V; Notes 1, 4 and 5

30

dB