CYStech Electronics Corp.

Spec. No. : C303N3C

Issued Date : 2002.12.18

Revised Date :

. .

Page No. : 1/3

DAN217N3

CYStek Product Specification

DAN217N3

HIGH-SPEED SWITCHING DIODE

Description

The DAN217N3 consists of two diodes in a plastic surface mount package. The diodes are

connected in series and the unit is designed for high-speed switching application in hybrid thick

and thin-film circuits.

Features

• Small SMD Package (SOT-23)

• Ultra-high Speed

• Low Forward Voltage

• Fast Reverse Recovery Time

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature............................................................................................ -65 ~ +150

°C

Junction Temperature .................................................................................................... +150

°C

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ................................................................................ 250 mW

• Maximum Voltages and Currents (Ta=25°C)

Reverse Voltage .................................................................................................................. 70 V

Repetitive Reverse Voltage ................................................................................................. 70 V

Forward Current ............................................................................................................. 150 mA

Repetitive Forward Current ............................................................................................ 500 mA

Forward Surge Current (1ms)....................................................................................... 1000 mA

Characteristic

Symbol

Condition

Min

Max

Unit

Reverse Breakdown Voltage

V(BR)

IR=100uA

70

-

V

VF(1)

IF=1mA

-

715

mV

VF(2)

IF=10mA

-

855

mV

VF(3)

IF=50mA

-

1000

mV

Forward Voltage

VF(4)

IF=150mA

-

1250

mV

Reverse Current

IR

VR=70

-

2.5

uA

Total Capacitance

CT

VR=0, f=1MHz

-

1.5

pF

Reverse Recovery Time

Trr

IF=IR=10mA, RL=100

Ω

measured at IR=1mA

-

6

nS