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D44H11J3 Datasheet(PDF) 1 Page - Cystech Electonics Corp. |
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D44H11J3 Datasheet(HTML) 1 Page - Cystech Electonics Corp. |
1 / 4 page CYStech Electronics Corp. Spec. No. : C606J3-A Issued Date : 2005.08.15 Revised Date : Page No. : 1/4 D44H11J3 CYStek Product Specification Low Vcesat NPN Epitaxial Planar Transistor D44H11J3 Features • Low VCE(sat) • High BVCEO • Excellent current gain characteristics Symbol Outline Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 6 V Collector Current (DC) IC 8 Collector Current (Pulse) ICP 16 (Note 1) A Power Dissipation @ TA=25℃ PD 1.75 (Note 2) Power Dissipation @ TC=25℃ PD 20 W Thermal Resistance, Junction to Ambient RθJA 71.4 (Note 2) °C/W Thermal Resistance, Junction to Case RθJC 6.25 °C/W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Note : 1. Single Pulse , Pw≦380µs,Duty≦2%. 2. When mounted on a PCB with the minimum pad size. D44H11J3 TO-252 B:Base C:Collector E:Emitter B C E |
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