D44H11J3 datasheet(1/4 Pages) CYSTEKEC

Part #	D44H11J3

Description	Low Vcesat NPN Epitaxial Planar Transistor

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Manufacturer	CYSTEKEC [Cystech Electonics Corp.]

Direct Link	http://www.cystekec.com

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CYStech Electronics Corp.

Spec. No. : C606J3-A

Issued Date : 2005.08.15

Revised Date :

Page No. : 1/4

D44H11J3

CYStek Product Specification

Low Vcesat NPN Epitaxial Planar Transistor

D44H11J3

Features

• Low VCE(sat)

• High BVCEO

• Excellent current gain characteristics

Symbol

Outline

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Collector-Base Voltage

VCBO

80

V

Collector-Emitter Voltage

VCEO

80

V

Emitter-Base Voltage

VEBO

6

V

Collector Current (DC)

IC

8

Collector Current (Pulse)

ICP

16 (Note 1)

A

Power Dissipation @ TA=25℃

PD

1.75 (Note 2)

Power Dissipation @ TC=25℃

PD

20

W

Thermal Resistance, Junction to Ambient

RθJA

71.4 (Note 2)

°C/W

Thermal Resistance, Junction to Case

RθJC

6.25

°C/W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

-55~+150

°C

Note : 1. Single Pulse , Pw≦380µs,Duty≦2%.

2. When mounted on a PCB with the minimum pad size.

D44H11J3

TO-252

B：Base

C：Collector

E：Emitter

B C E

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