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MTN7002N3 Datasheet(PDF) 1 Page - Cystech Electonics Corp. |
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MTN7002N3 Datasheet(HTML) 1 Page - Cystech Electonics Corp. |
1 / 4 page CYStech Electronics Corp. Spec. No. : C325N3 Issued Date : 2002.12.18 Revised Date : 2005.01.07 Page No. : 1/4 MTN7002N3 CYStek Product Specification N-CHANNEL MOSFET MTN7002N3 Description •The MTN7002N3 is a N-channel enhancement-mode MOSFET. •Pb-free package Symbol Outline Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage BVDSS 60 V Drain-Gate Voltage (RGS=1M Ω) BVDGR 60 V Gate-Source Voltage VGS ±40 V Continuous Drain Current (Ta=25 °C) ID 200 *1 mA Continuous Drain Current (Ta=100 °C) ID 115 *1 mA Pulsed Drain Current (Ta=25 °C) IDM 800 *2 mA Total Power Dissipation (Ta=25 °C) 200 Total Power Dissipation (Tc=25 °C) PD 500 mW Operating Junction Temperature Tj -55~+150 °C Storage Temperature Tstg -55~+150 °C Thermal Resistance, Junction-to-Ambient Rth,ja 625 °C/W Thermal Resistance, Junction-to-Case Rth,jc 250 °C/W Lead Temperature, for 10 second Soldering TL 240 °C Note : *1. The power dissipation of the package may result in a continuous drain current *2. Pulse Width ≤ 300µs, Duty cycle ≤2% SOT-23 MTN7002N3 G:Gate S:Source D:Drain D G S |
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