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SRAF1070 Datasheet(PDF) 1 Page - Mospec Semiconductor |
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SRAF1070 Datasheet(HTML) 1 Page - Mospec Semiconductor |
1 / 2 page MOSPEC SRAF1070 thru SRAF10100 Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers …Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. * Low Forward Voltage. * Low Switching noise. * High Current Capacity * Guarantee Reverse Avalanche. * Guard-Ring for Stress Protection. * Low Power Loss & High efficiency. * 125℃ Operating Junction Temperature * Low Stored Charge Majority Carrier Conduction. * Plastic Material used Carries Underwriters Laboratory MAXIMUM RATINGS SRAF10 Characteristic Symbol 70 80 90 100 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 70 80 90 100 V RMS Reverse Voltage VR(RMS) 49 56 63 70 V Average Rectifier Forward Current IF(AV) 10 A Peak Repetitive Forward Current (Rate VR, Square Wave, 20kHz) IFM 20 V Non-Repetitive Peak Surge Current (Surge applied at rate load conditions halfware, single phase, 60Hz) IFSM 175 V Operating and Storage Junction Temperature Range TJ , TSTG -65 to +125 ℃ SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 70-100 VOLTS ITO-220AC MILLIMETERS DIM MIN MAX A 15.05 15.15 B 13.35 13.45 C 10.00 10.10 D 6.55 6.65 E 2.65 2.75 F --- 1.00 G 1.15 1.25 H 0.55 0.65 I 4.80 5.20 J 3.00 3.20 K 1.10 1.20 L 0.55 0.65 M 4.40 4.60 N 1.15 1.25 P 2.65 2.75 O 3.35 3.45 Q 3.15 3.25 ELECTRIAL CHARACTERISTICS SRAF10 Characteristic Symbol 70 80 90 100 Unit Maximum Instantaneous Forward Voltage ( IF =10 Amp TC = 25℃) ( IF =10 Amp TC = 125℃) VF 0.75 0.70 0.80 0.68 V Maximum Instantaneous Reverse Current ( Rated DC Voltage, TC = 25℃) ( Rated DC Voltage, TC = 125℃) IR 1.0 50 mA |
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