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S60D30CE Datasheet(PDF) 1 Page - Mospec Semiconductor |
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S60D30CE Datasheet(HTML) 1 Page - Mospec Semiconductor |
1 / 2 page MOSPEC S40D90CE Thru S40D100CE Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. *Low Forward Voltage. *Low Switching noise. *High Current Capacity *Guarantee Reverse Avalanche. *Guard-Ring for Stress Protection. *Low Power Loss & High efficiency. *150℃ Operating Junction Temperature *Low Stored Charge Majority Carrier Conduction. *Plastic Material used Carries Underwriters Laboratory Flammability Classification 94V-O MAXIMUM RATINGS Characteristic Symbol S40D90CE S40D100CE Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 90 100 V RMS Reverse Voltage VR(RMS) 63 70 V Average Rectifier Forward Current Total Device (Rated VR),TC=100℃ IF(AV) 20 40 A Peak Repetitive Forward Current (Rate VR, Square Wave, 20kHz) IFM 40 A Non-Repetitive Peak Surge Current (Surge applied at rate load conditions halfware, single phase, 60Hz) IFSM 300 A Operating and Storage Junction Temperature Range TJ , TSTG -65 to +150 ℃ SCHOTTKY BARRIER RECTIFIERS 40 AMPERES 90-100 VOLTS TO-3P DIM MILLIMETERS MIN MAX A 20.63 22.38 B 15.38 16.20 C 1.90 2.70 D 5.10 6.10 E 14.81 15.22 F 11.72 12.84 G 4.20 4.50 H 1.82 2.46 I 2.92 3.23 J 0.89 1.53 K 5.26 5.66 L 18.50 21.50 M 4.68 5.36 N 2.40 2.80 O 3.25 3.65 P 0.55 0.70 Common Cathode Suffix “C” ELECTRIAL CHARACTERISTICS Characteristic Symbol S40D90CE S40D100CE Unit Maximum Instantaneous Forward Voltage ( IF =20 Amp TC = 25℃) ( IF =20 Amp TC = 125℃) VF 0.85 0.75 V Maximum Instantaneous Reverse Current ( Rated DC Voltage, TC = 25℃) ( Rated DC Voltage, TC = 125℃) IR 2.0 80 mA |
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