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S20C80CE Datasheet(PDF) 1 Page - Mospec Semiconductor |
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S20C80CE Datasheet(HTML) 1 Page - Mospec Semiconductor |
1 / 2 page MOSPEC S20C70CE Thru S20C100CE Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. * Low Forward Voltage. * Low Switching noise. * High Current Capacity * Guarantee Reverse Avalanche. * Guard-Ring for Stress Protection. * Low Power Loss & High efficiency. * 150℃ Operating Junction Temperature * Low Stored Charge Majority Carrier Conduction. * Plastic Material used Carries Underwriters Laboratory MAXIMUM RATINGS S20C Characteristic Symbol 70CE 80CE 90CE 100CE Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 70 80 90 100 V RMS Reverse Voltage VR(RMS) 49 56 63 70 V Average Rectifier Forward Current Total Device (Rated VR),TC=100℃ IF(AV) 10 20 A Peak Repetitive Forward Current (Rate VR, Square Wave, 20kHz) IFM 20 A Non-Repetitive Peak Surge Current (Surge applied at rate load conditions halfware, single phase, 60Hz) IFSM 200 A Operating and Storage Junction Temperature Range TJ , TSTG -65 to +150 ℃ SCHOTTKY BARRIER RECTIFIERS 20 AMPERES 70-100 VOLTS TO-220AB MILLIMETERS DIM MIN MAX A 14.68 15.32 B 9.78 10.42 C 5.02 6.52 D 13.06 14.62 E 3.57 4.07 F 2.42 2.66 G 1.12 1.36 H 0.72 0.96 I 4.22 4.98 J 1.14 1.38 K 2.20 2.98 L 0.33 0.55 M 2.48 2.98 O 3.70 3.90 Common Cathode Suffix “C” ELECTRIAL CHARACTERISTICS S20C Characteristic Symbol 70CE 80CE 90CE 100CE Unit Maximum Instantaneous Forward Voltage ( IF =10 Amp TC = 25℃) ( IF =10 Amp TC = 125℃) VF 0.75 0.68 0.80 0.73 V Maximum Instantaneous Reverse Current ( Rated DC Voltage, TC = 25℃) ( Rated DC Voltage, TC = 125℃) IR 0.5 30 mA |
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