1

Schottky Barrier Diodes (SBD)

MA4S713

Silicon epitaxial planar type

For switching circuits

For wave detection circuit

I Features

• Small S-mini type 4-pin package

• Two isolated elements contained in one package, allowing high-

density mounting

• Flat lead type package, resulting in promotion of the actual mounting

ratio and solderability with a high-speed mounter

• Optimum for low-voltage rectification because of its low forward rise

• Optimum for high-frequency rectification because of its short reverse

I Absolute Maximum Ratings T

Unit : mm

Parameter

Symbol

Rating

Unit

Reverse voltage (DC)

30

V

Peak forward current

30

V

Peak forward

Single

150

mA

current

 

110

Forward current

Single

30

mA

(DC)

 

20

Junction temperature

125

°C

Storage temperature

−55 to +125

°C

1 : Anode 1

2 : Anode 2

3 : Cathode 2

4 : Cathode 1

S-Mini Type Package (4-pin)

Note) * : Value per chip

Internal Connection

Marking Symbol: M1N

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse current (DC)

1

µA

Forward voltage (DC)

0.4

V

1

V

Terminal capacitance

1.5

pF

1

ns

Detection efficiency

η

65

%

Ω, C

I Electrical Characteristics T

Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a

human body and the leakage of current from the operating equipment

 

2. Rated input/output frequency: 2 000 MHz

2.1

± 0.1

1.25

± 0.1

1

23

4

1

2

4

3

Bias Application Unit N-50BU

90%

Pulse Generator

(PG-10N)

R

W.F.Analyzer

(SAS-8130)

R

t

t

δ = 0.05

I

I

R

10%

Input Pulse

Output Pulse

I

t

r

t

p

t

rr

V

R

I

F

t

t

A