TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com

Advance Product Information

July 14, 2005

2

TABLE I

MAXIMUM RATINGS 1/

SYMBOL

PARAMETER

VALUE

NOTES

Vd

Drain Voltage

[3.5 + (0.0125)(Id)] V

2/ 3/

Vg

Gate Voltage Range

-1 TO +0.5 V

Id

Drain Current (gate biased)

240 mA

2/ 4/

Ig

Gate Current

14 mA

4/

Input Continuous Wave Power

21 dBm

Power Dissipation

See note 5/

2/

Operating Channel Temperature

117

Mounting Temperature (30 Seconds)

320

Storage Temperature

-65 to 150

1/

These ratings represent the maximum operable values for this device.

2/

Combinations of supply voltage, supply current, input power, and output power shall not exceed

3/

Unit for Id is A

4/

Total current for the entire MMIC.

5/

For a median life time of 1E+6 hrs, Power dissipation is limited to:

BASE

6/

Junction operating temperature will directly affect the device median time to failure (MTTF). For

maximum life, it is recommended that junction temperatures be maintained at the lowest possibl

levels.

7/

These ratings apply to each individual FET.

TGA2511

TABLE II

DC PROBE TESTS

(Ta = 25

SYMBOL

PARAMETER

MIN.

TYP.

MAX.

UNITS

Breakdown Voltage Gate-

Source

-30

-5

V

Pinch-Off Voltage

-0.7

-0.1

V

Q1, Q2, Q5, Q6 are 400 um FET.