RF101A2S

Diodes

1/3

Fast recovery diode

RF101A2S

Applications

External dimensions (Unit : mm)

General rectification

29±1

29±1

3.0±0.2

φ0.6±0.1

φ2.5±0.2

CATHODE　BAND

ROHM : MSR

①

Manufacture Date

②

(GREEN)

Features

1) Cylindrical mold type. (MSR)

3) Ultra high switching.

4) Low switching loss.

5) High ESD.

Taping specifications (Unit : mm)

Construction

T-31 52.4±1.5

Ｂ5.0±0.5

Ｃ0.5ＭＡＸ

Ｄ0

Ｅ

50.4±0.4

Ｆ0.3ＭＡＸ

H1

6.0±0.5

H2

5.0±0.5

L1-L2

0.6ＭＡＸ

＊H1(6mm)：BROWN

注)　累積ピッチの許容差は20ピッチで±1.5mm以下とする

記号

寸法規格値(mm)

Ａ

T-32 26.0+0.4

-0

A

H2

H2

E

B

C

L2

L1

F

D

H1

H1

IVORY

BLUE

cf : cumulative pitch tolerance w ith 20 pitch than ±1.5mm

Mark

Stabdard dimension

value (mm)

Silicon epitaxial planar

Absolute maximum ratings (Ta=25

°C)

Symbol

Unit

V

R

200

R

A

For

Junct

S

(

RM

V

V

Io

A

ward current surge peak （t=100µs）

A

Tj

℃

Tstg

℃

-55 to +150

Parameter

everse voltage (DC)

everse voltage (repetitive peak)

200

Limits

verage rectified forward current (*1)

1

20

150

ion temperature

*1) Mounted on epoxy board. 180°Half sine wave

torage temperature

Electrical characteristic (Ta=25

°C)

Symbol

Min.

Typ.

Max.

Unit

-

0.815

0.87

V

Reverse current

-0.01

10

µA

Reverse recovery time

trr

-12

25

ns

Parameter

orward voltage

Conditions

F