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STS1HNK60 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STS1HNK60
Description  N-CHANNEL 600V - 8W - 0.3A SO-8 SuperMESH-TMPower MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STS1HNK60 Datasheet(HTML) 3 Page - STMicroelectronics

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STS1HNK60
ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS >ID(on) xRDS(on)max,
ID = 0.5 A
1S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V,f= 1MHz,VGS = 0
156
23.5
3.8
pF
pF
pF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD =300 V, ID = 0.5 A
RG = 4.7Ω VGS =10 V
(Resistive Load see, Figure 3)
6.5
5
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =480 V, ID =1 A,
VGS =10V, RG = 4.7Ω
7
1.1
3.4
10
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 300 V, ID = 0.5 A
RG =4.7Ω VGS =10 V
(Resistive Load see, Figure 3)
19
25
ns
ns
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 480V, ID = 1.0 A,
RG =4.7Ω, VGS = 10V
(Inductive Load see, Figure 5)
24
25
44
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
0.3
1.2
A
A
VSD (1)
Forward On Voltage
ISD = 0.3 A, VGS =0
1.6
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 0.3 A, di/dt = 100 A/µs
VDD =25 V,Tj = 150°C
(see test circuit, Figure 5)
229
377
3.3
ns
µC
A


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