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NTHC5513T1G Datasheet(PDF) 8 Page - ON Semiconductor

Part # NTHC5513T1G
Description  Power MOSFET 20 V, 3.9 A / ??.0 A, Complementary ChipFET-TM
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NTHC5513T1G Datasheet(HTML) 8 Page - ON Semiconductor

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NTHC5513
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8
Figure 22. Basic
Figure 23. Style 2
0.457
0.018
2.032
0.08
0.635
0.025
0.66
0.026
0.711
0.028
0.457
0.018
2.032
0.08
0.635
0.025
0.66
0.026
0.254
0.010
1.092
0.043
0.178
0.007
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
BASIC PAD PATTERNS
The basic pad layout with dimensions is shown in
Figure 22. This is sufficient for low power dissipation
MOSFET
applications,
but
power
semiconductor
performance requires a greater copper pad area, particularly
for the drain leads.
The minimum recommended pad pattern shown in
Figure 23 improves the thermal area of the drain
connections (pins 5, 6, 7, 8) while remaining within the
confines of the basic footprint. The drain copper area is
0.0019 sq. in. (or 1.22 sq. mm). This will assist the power
dissipation path away from the device (through the copper
lead−frame) and into the board and exterior chassis (if
applicable) for the single device. The addition of a further
copper area and/or the addition of vias to other board layers
will enhance the performance still further.


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