MA3U760 datasheet(1/2 Pages) PANASONIC

Part #	MA3U760

Description	Silicon epitaxial planar type (cathode common)

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Manufacturer	PANASONIC [Panasonic Semiconductor]

Direct Link	http://www.panasonic.com/industrial/

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Schottky Barrier Diodes (SBD)

MA3U760

Silicon epitaxial planar type (cathode common)

For switching power supply

I Features

• Small U-type package and surface mounting

• High breakdown voltage V

R

• Low forward rise voltage V

F

• Cathode common dual type

I Absolute Maximum Ratings T

a = 25°C

Unit : mm

1 : Anode

2 : Cathode

(Common)

3 : Anode

U-Type Package

Parameter

Symbol

Rating

Unit

Repetitive peak reverse voltage

VRRM

90

V

Average forward current

IF(AV)

5A

Non-repetitive peak forward

IFSM

40

A

surge current*

Junction temperature

Tj

−40 to +125

°C

Storage temperature

Tstg

−40 to +125

°C

Note) * : Half sine-wave: 10 ms/cycle

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse current (DC)

IR

VR = 90 V, TC = 25

°C

1.0

mA

Forward voltage (DC)

VF

IF = 2.5 A, TC = 25

°C

0.85

V

Thermal resistance*

Rth(j-c)

Between junction and case

12.5

°C/W

I Electrical Characteristics T

a = 25

°C

Note) 1. Rated input/output frequency: 1 000 MHz

2. * : TC = 25

°C

6.5

± 0.1

5.3

± 0.1

4.35

± 0.1

4.6

± 0.1

2.3

± 0.1

0.75

± 0.1

123

0.93

± 0.1

2.3

± 0.1

0.5

± 0.1

0.5

± 0.1

0.1

± 0.05

1.0

± 0.1

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MA3U760 Datasheet(PDF) 1 Page - Panasonic Semiconductor

MA3U760 Datasheet(HTML) 1 Page - Panasonic Semiconductor

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