VP2206N3 datasheet(4/4 Pages) SUTEX

Part #	VP2206N3

Description	P-Channel Enhancement-Mode Vertical DMOS FETs

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Manufacturer	SUTEX [Supertex, Inc]

Direct Link	http://www.supertex.com

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1235 Bordeaux Drive, Sunnyvale, CA 94089

TEL: (408) 744-0100 • FAX: (408) 222-4895

www.supertex.com

11/12/01

Gate Drive Dynamic Characteristics

On-Resistance vs. Drain Current

Transfer Characteristics

Capacitance vs. Drain-to-Source Voltage

400

0

-10

-20

-30

-40

300

200

0

0-2

-4-6-8

-10

-8

-6

-4

-2

0

-50

0

50

100

150

1.1

1.0

5

2

1.2

1.1

1.0

0.9

0.8

0.7

-10

-8

-6

-4

-2

024

6

810

-50

0

50

100

150

310 pF

VGS = -10V

125°C

0-2

-4

-6

-10

-8

0

3

4

f = 1MHz

0.9

725 pF

2.0

1.6

1.2

0.8

0.4

0

V(th)@ -1mA

RDS(ON) @ -10V, -3.5A

25°C

100

0

1

VGS = -5V

Tj (°C)

ID (amperes)

BVDSS Variation with Temperature

VDS = -25V

Tj (°C)

V(th) and RDS Variation with Temperature

VGS (volts)

TA = -55°C

QG (nanocoulombs)

VDS (volts)

CISS

COSS

CRSS

VDS = -40V

VDS = -10V

VP2206

Typical Performance Curves

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VP2206N3 Datasheet(PDF) 4 Page - Supertex, Inc

VP2206N3 Datasheet(HTML) 4 Page - Supertex, Inc

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