Switching Diodes

1

Note) * : t = 1 s

MA3S132A

Silicon epitaxial planar type

For switching circuits

I Features

• Short reverse recovery time t

rr

• Small terminal capacitance, C

t

• Super-small SS-mini type package, allowing high-density mount-

ing

I Absolute Maximum Ratings T

1 : Cathode

2 : NC

3 : Anode

SS-Mini Type Package (3-pin)

Unit : mm

Internal Connection

Marking Symbol: MB

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse current (DC)

= 75 V

100

nA

Forward voltage (DC)

= 100 mA

1.2

V

Reverse voltage (DC)

V

Terminal capacitance

= 0 V, f = 1 MHz

2

pF

= 10 mA, V

R

= 6 V

3

ns

Ω

I Electrical Characteristics T

a

= 25°C

Note) 1. Rated input/output frequency: 100 MHz

Parameter

Symbol

Rating

Unit

Reverse voltage (DC)

80

V

Peak reverse voltage

80

V

Forward current (DC)

100

mA

Peak forward current

225

mA

Non-repetitive peak forward

500

mA

surge current*

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

1.60

± 0.1

0.80

1

2

0.44

0.44

3

0.80

± 0.05

0.88

+ 0.05

− 0.03

1

2

3

Bias Application Unit N-50BU

90%

Pulse Generator

(PG-10N)

R

W.F.Analyzer

(SAS-8130)

R

t

t

δ = 0.05

I

V

R

10%

Input Pulse

Output Pulse

I

t

r

t

p

t

rr

V

R

I

F

t

t

A