1

Schottky Barrier Diodes (SBD)

MA3J700

Silicon epitaxial planar type

For high-frequency rectification

I Features

• S-mini type 3-pin package

• Allowing to rectify under (I

• Optimum for high-frequency rectification because of its short

I Absolute Maximum Ratings T

Unit : mm

Parameter

Symbol

Rating

Unit

Reverse voltage (DC)

40

V

Repetitive peak reverse voltage

40

V

Average forward current

500

mA

Non-repetitive peak forward

2A

Junction temperature

125

°C

Storage temperature

−55 to +150

°C

1 : Anode

2 : NC

3 : Cathode

Flat S-Mini Type Package (3-pin)

Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave

(non-repetitive)

Internal Connection

Marking Symbol: M2W

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse current (DC)

100

µA

Forward voltage (DC)

0.55

V

Terminal capacitance

60

pF

5

ns

I Electrical Characteristics T

a

= 25°C

Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a

human body and the leakage of current from the operating equipment.

 

2. Rated input/output frequency: 400 MHz

1

2

3

1.25

± 0.1

0.425

0.425

2.1

± 0.1

1

2

3

Bias Application Unit N-50BU

90%

Pulse Generator

(PG-10N)

R

W.F.Analyzer

(SAS-8130)

R

t

t

δ = 0.05

I

I

R

10%

Input Pulse

Output Pulse

I

t

r

t

p

t

rr

V

R

I

F

t

t

A