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MW5IC2030GNBR1 Datasheet(PDF) 1 Page - Freescale Semiconductor, Inc |
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MW5IC2030GNBR1 Datasheet(HTML) 1 Page - Freescale Semiconductor, Inc |
1 / 16 page MW5IC2030NBR1 MW5IC2030GNBR1 1 RF Device Data Freescale Semiconductor RF LDMOS Wideband Integrated Power Amplifiers The MW5IC2030N wideband integrated circuit is designed with on -chip matching that makes it usable from 1930 to 1990 MHz. This multi -stage structure is rated for 26 to 28 Volt operation and covers all typical cellular base station modulation formats. Final Application • Typical CDMA Performance: VDD = 27 Volts, IDQ1 = 160 mA, IDQ2 = 230 mA, Pout = 5 Watts Avg., Full Frequency Band, IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13), Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 23 dB Drain Efficiency — 20% ACPR @ 885 kHz Offset — -49 dBc in 30 kHz Channel Bandwidth Driver Application • Typical CDMA Performance: VDD = 27 Volts, IDQ1 = 220 mA, IDQ2 = 240 mA, Pout = 1 Watt Avg., Full Frequency Band, IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13), Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 24 dB ACPR @ 885 kHz Offset — -63 dBc in 30 kHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 27 Vdc, 1990 MHz, 30 Watts CW Output Power • Stable into a 3:1 VSWR. All Spurs Below -60 dBc @ 0 to 43 dBm CW Pout. • On-Chip Matching (50 Ohm Input, >4 Ohm Output) • Integrated Temperature Compensation Capability with Enable/Disable Function • On-Chip Current Mirror gm Reference FET for Self Biasing Application (1) • Integrated ESD Protection • 200°C Capable Plastic Package • N Suffix Indicates Lead-Free Terminations. RoHS Compliant. • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel 1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1987. Document Number: MW5IC2030N Rev. 7, 1/2006 Freescale Semiconductor Technical Data 1930 -1990 MHz, 30 W, 26 V GSM/GSM EDGE, W-CDMA, PHS RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 1329-09 TO-272 WB-16 PLASTIC MW5IC2030NBR1 MW5IC2030NBR1 MW5IC2030GNBR1 CASE 1329A-03 TO-272 WB-16 GULL PLASTIC MW5IC2030GNBR1 Figure 1. Functional Block Diagram Figure 2. Pin Connections (Top View) GND GND RFin VRG1/VGS1 GND VDS1 VDS2/ RFout GND VGS2 GND VRD2 VRG2 VRD1 NC NC NC VRG1/VGS1 RFin VDS1 VGS2 VDS2/RFout Quiescent Current Temperature Compensation VRD2 VRG2 VRD1 2 3 4 5 6 7 8 16 15 14 13 12 9 10 11 1 Note: Exposed backside flag is source terminal for transistors. Freescale Semiconductor, Inc., 2006. All rights reserved. |
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