NTF6P02T3 datasheet(1/8 Pages) ONSEMI

Part #	NTF6P02T3

Description	Power MOSFET -6.0 Amps, -20 Volts P-Channel SOT-223

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Publication Order Number:

NTF6P02T3/D

September, 2002 – Rev. 0

1

NTF6P02T3

Power MOSFET

-6.0 Amps, -20 Volts

P–Channel SOT–223

Features

• Low R

DS(on)

• Logic Level Gate Drive

• Diode Exhibits High Speed, Soft Recovery

• Avalanche Energy Specified

Typical Applications

• Power Management in Portables and Battery–Powered Products, i.e.:

Cellular and Cordless Telephones and PCMCIA Cards

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain–to–Source Voltage

VDSS

–20

Vdc

Gate–to–Source Voltage

VGS

±8.0

Vdc

Drain Current (Note 1)

– Continuous @ TA = 25°C

– Continuous @ TA = 70°C

– Single Pulse (tp = 10 µs)

ID

IDM

–10

–8.4

–35

Adc

Apk

Total Power Dissipation @ TA = 25°C

PD

8.3

W

Operating and Storage Temperature Range

TJ, Tstg

–55 to

+150

°C

Single Pulse Drain–to–Source Avalanche

Energy – Starting TJ = 25°C

(VDD = –20 Vdc, VGS = –5.0 Vdc,

IL(pk) = –10 A, L = 3.0 mH, RG = 25W)

EAS

150

mJ

Thermal Resistance

– Junction to Lead (Note 1)

– Junction to Ambient (Note 2)

– Junction to Ambient (Note 3)

RθJL

RθJA

15

71.4

160

°C/W

Maximum Lead Temperature for Soldering

Purposes, 1/8

″ from case for 10 seconds

TL

260

°C

1. Steady State.

2. When surface mounted to an FR4 board using 1

″ pad size,

(Cu. Area 1.127 in2), Steady State.

3. When surface mounted to an FR4 board using minimum recommended pad

size, (Cu. Area 0.412 in2), Steady State.

D

G

S

1

2

3

4

–6.0 AMPERES

–20 VOLTS

RDS(on) = 44 mW (Typ.)

P–Channel

Device

Package

Shipping

ORDERING INFORMATION

NTF6P02T3

SOT–223

4000/Tape & Reel

SOT–223

CASE 318E

STYLE 3

6P02

MARKING

DIAGRAM

AWW

A

= Assembly Location

WW

= Work Week

6P02

= Device Code

PIN ASSIGNMENT

3

2

1

Gate

Drain Source

4 Drain

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